Изображения являются только для ссылки
FQP3P50
+БОМPOWER FIELD-EFFECT TRANSISTOR, 2
-
ПроизводительКомпания Fairchild Semiconductor
-
Мфр. Часть #FQP3P50
-
Лист данных FQP3P50 DataSheet
-
Пакет TO-220-3
-
В наличии4971
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 2.7A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.9Ohm @ 1.35A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 660 pF @ 25 V |
| PowerDissipation(Max) | 85W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
Обзор
Description
Typically, such an introduction would outline key themes, essential terminology, and the learning outcomes expected from the course. It might also include an overview of the methodology or approach used in instruction, and any prerequisites needed for understanding the material. Additionally, the introduction could provide context on how the course fits within a broader field of study or its relevance to real-world applications.
If FQP3P50 is a course code at a specific institution, checking the course catalog or syllabus provided by the institution would offer detailed information. Often, these introductory sections are designed to set the stage for deeper exploration of the topic, equipping students with the necessary foundational knowledge and tools to engage effectively with the material presented in subsequent sections or classes.
Equivalent
1. IRF9530
2. STP55NF06
3. 2SJ449
These equivalents are similar in terms of voltage, current ratings, and package type, but it's crucial to verify the datasheets for exact specifications and compatibility in your application. Always compare the parameters such as Vds, Id, Rds(on), and gate charge to ensure proper substitution.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) rating of -500V and a continuous drain current (I_D) of -3A, making it suitable for high-voltage applications.
2. R_DS(on): The on-resistance is typically 3.6 Ohms at V_GS = -10V, which indicates efficient conduction when the MOSFET is turned on.
3. Gate Threshold Voltage: The threshold voltage (V_GS(th)) ranges from -2V to -4V, allowing for reliable switching performance.
4. Package Type: It is available in a TO-220 package, which provides good thermal performance and ease of mounting on PCBs.
5. Applications: Commonly used in power management, automotive, and industrial applications where efficient switching and high-voltage control are required.
6. Temperature Range: It operates efficiently within a wide temperature range, making it versatile for various environmental conditions.
These features make the FQP3P50 suitable for applications requiring robust performance in high-voltage and high-current scenarios.
Pinout
1. Gate (G): This is the control terminal. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): This is the terminal through which the main current flows out of the MOSFET when it is in the ON state.
3. Source (S): This is the terminal through which the main current enters the MOSFET.
The FQP3P50 is designed for switching applications and can handle significant power, with a maximum drain-source voltage of -500V and a continuous drain current of -3A at 25°C.
Manufacturer
Application
1. Switching Power Supplies: Used for efficient power conversion in low-power applications.
2. Motor Control: Suitable for driving small DC motors and actuators.
3. Load Switching: Ideal for switching loads in battery-powered devices due to its low on-resistance.
4. Amplifiers: Utilized in audio and RF amplifiers for signal amplification with minimal distortion.
5. LED Drivers: Drives LED arrays efficiently with stable current control.
6. Battery Management: Employed in charging circuits and battery protection systems.
These applications leverage the MOSFET's fast switching speed and low power loss characteristics.