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FQPF3N80C
+БОМMOSFET N-CH 800V 3A TO220F
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ПроизводительОнсеми
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Мфр. Часть #FQPF3N80C
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Лист данных FQPF3N80C DataSheet
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Пакет TO-220
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В наличии6920
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tube |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.8Ohm @ 1.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 16.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 705 pF @ 25 V |
| PowerDissipation(Max) | 39W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220F-3 |
Обзор
Description
- Voltage Rating: 800V
- Current Rating: 3A (continuous)
- Low On-Resistance (RDS(on)): 3.0Ω (max)
- Fast Switching: Suitable for high-efficiency applications
- Package: TO-220F (isolated tab for easier mounting)
Applications:
- Power supplies (SMPS, flyback converters)
- Lighting (LED drivers, ballasts)
- Motor control
Advantages:
- High voltage tolerance
- Low gate charge for reduced switching losses
- Isolated package improves thermal management
Typical Use: Medium-power switching where efficiency and isolation are critical.
For detailed specs, refer to the datasheet.
Features
- Voltage Rating: 800V drain-source voltage (VDSS), suitable for high-voltage applications.
- Current Rating: 3A continuous drain current (ID).
- Low On-Resistance: 3.0Ω (typical) at 10V gate drive (RDS(on)), reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Low Gate Charge: Enhances efficiency in switching circuits.
- Avalanche Energy Rated: Improves reliability in inductive load conditions.
- Package: TO-220F (fully insulated), offering easy mounting and thermal performance.
Ideal for power supplies, inverters, and motor control.
Pinout
1. Gate (G): Controls the switching operation (input signal).
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground/reference terminal.
Key Features:
- 800V drain-source voltage (VDS).
- 3A continuous drain current (ID).
- Low on-resistance (RDS(on)).
- Used in power switching applications (e.g., power supplies, inverters).
The TO-220F package is lead-free and suitable for through-hole mounting.
Manufacturer
Fairchild Semiconductor, founded in 1957, was a pioneer in transistor and integrated circuit technology. It was acquired by ON Semiconductor in 2016, which continues to produce Fairchild-branded components.
The company specializes in power management, analog, and discrete semiconductors for industrial, automotive, and consumer applications. The FQPF3N80C is part of their power MOSFET lineup, designed for high-voltage switching applications.
Application
- Switching Power Supplies: Used in AC-DC converters and flyback circuits.
- Lighting Systems: Efficiently drives LED drivers and ballasts.
- Motor Control: Suitable for small motor drives and inverters.
- Consumer Electronics: Found in adapters, chargers, and power management circuits.
With an 800V drain-source voltage (VDSS) and 3A current rating, it’s ideal for energy-efficient, compact designs.
