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GD25LR256EYIGR
+БОМIC FLASH 256MBIT SPI/QUAD 8WSON
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ПроизводительКомпания GigaDevice Semiconductor (HK) Limited
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Мфр. Часть #GD25LR256EYIGR
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В наличии20842
365 Дни гарантии качества
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Спецификации
| Атрибут | Ценность |
| Series | GD25LR |
| Part Status | Active |
| Base Product Number | GD25LR256 |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR (SLC) |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8 |
| Memory Interface | SPI - Quad I/O, QPI, DTR |
| Clock Frequency | 104 MHz |
| Write Cycle Time - Word, Page | 70µs, 1.2ms |
| Voltage - Supply | 1.65V ~ 2V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (6x8) |
| Packaging | Tape & Reel (TR) |
| Access Time | 9 ns |
Обзор
Description
- Interface: SPI, with dual/quad SPI options for higher throughput.
- Density and organization: 256 Mbit (32 MB); 256-byte page size; 4 KB sectors; 64 KB and/or 256 KB blocks for erase.
- Voltage and temp: typically 2.7–3.6 V operation; industrial temperature range (-40 to 85 °C).
- Features: fast read modes, power-down/deep power-down, hardware write protection and security features, and standard read/write/erase commands.
- Package: 8-pin package (suffix indicates specific packaging/RoHS/temperature options).
Common use: firmware storage, boot memory, and non-volatile data storage in microcontrollers, FPGAs, and SoCs. For exact timing, command set, and electrical specs, consult the official GD25LR256E datasheet for the EYIGR variant.
Equivalent
- Winbond: W25Q256FV / W25Q256JV
- Macronix: MX25U25645G, MX25L25645G
- ISSI: IS25LP256D
- Cypress/Spansion: S25FL256S
Note: choose devices with matching timing, voltage, and dual/quad SPI features for closest compatibility.
Features
- 256-Mbit serial NOR flash memory
- SPI-compatible interface with dual/quad I/O support for higher throughput
- 24-bit addressing
- Page program: up to 256 bytes
- Erase options: 4K sectors, 32K/64K blocks, and bulk erase
- Fast read modes; up to about 104 MHz ( Quad/DUAL I/O data rates)
- Deep power-down mode and low-power standby
- Security features: hardware write protection, security ID/OTP (security registers)
- Operating voltage: typically 2.7V–3.6V
- Temperature range: -40°C to 85°C (industrial)
- RoHS compliant and suitable for space- and cost-constrained designs
Notes: exact voltage range and performance may vary by revision; please refer to the datasheet for precise specs.
Pinout
Function: GD25LR256EYIGR is a 256-Mbit SPI serial flash memory (non-volatile) used for external storage of firmware/data. It uses an SPI interface with CS, SCK, SI, SO, plus optional WP# and HOLD# control pins, along with VCC and GND.
Manufacturer
- What kind of company: A Chinese fabless semiconductor company that designs and markets non-volatile flash memory (serial NOR/NAND) and outsources manufacturing to foundries.
Application
- Boot/code flash for microcontrollers and SoCs
- Firmware storage and OTA/DFU updates
- Data logging, parameter storage, and calibration data in IoT, consumer electronics, and industrial equipment
- Firmware/images storage in routers, set-top boxes, cameras
- Replacement for internal ROM in embedded designs
(Useful for compact, non-volatile storage in embedded systems.)