Изображения являются только для ссылки
GD25Q80ETIGR
+БОМIC FLASH 8MBIT SPI/QUAD 8SOP
-
ПроизводительКомпания GigaDevice Semiconductor (HK) Limited
-
Мфр. Часть #GD25Q80ETIGR
-
В наличии7572
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 8Mbit |
| Memory Organization | 1M x 8 |
| Memory Interface | SPI - Quad I/O |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | 70µs, 2ms |
| Access Time | 7 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| Base Product Number | GD25Q80 |
Обзор
Description
The chip operates on a voltage range of 2.7V to 3.6V and supports both read and write operations, with a fast erase time, enhancing overall efficiency. Its architecture allows for reliable data retention and endurance, typically rated for 100,000 program/erase cycles.
Additionally, the GD25Q80ETIGR incorporates features such as deep power-down mode for energy saving and an easy-to-use command set, facilitating integration into existing designs. This makes it a popular choice for developers looking for a compact, efficient memory solution for their products.
Equivalent
Features
- Interface: Supports SPI (Serial Peripheral Interface) with Quad-SPI capability for high-speed data transfer.
- Speed: Offers a maximum clock frequency of up to 104MHz, enabling fast read operations.
- Voltage Range: Operates on a wide voltage range of 2.7V to 3.6V, making it suitable for various applications.
- Memory Architecture: Includes 64 sectors of 16KB each, allowing for flexible memory management.
- Endurance: Ensures a high endurance of up to 100,000 program/erase cycles per sector.
- Data Retention: Provides a data retention period of up to 20 years.
- Packages: Available in various packages, including SOIC and WSON, facilitating integration into different designs.
- Applications: Ideal for embedded systems, consumer electronics, and other applications requiring reliable non-volatile storage.
This combination of features makes the GD25Q80ETIGR suitable for diverse applications needing efficient and reliable memory solutions.
Pinout
1. CS# (Chip Select) - Active low signal to enable the device.
2. SO (Serial Output) - Data output pin for transferring data to the host.
3. SI (Serial Input) - Data input pin for receiving commands and data from the host.
4. SCK (Serial Clock) - Clock signal for synchronizing data transmission.
5. WP# (Write Protect) - Active low pin to protect against accidental writes.
6. HOLD# (Hold) - Active low pin to pause the operation without deselecting the chip.
7. VCC - Power supply pin (1.7V to 2.0V).
8. GND - Ground connection.
The device supports various features such as Quad SPI, fast read, and sector erase.
Manufacturer
Application
1. Consumer Electronics: Used in devices like smartphones, tablets, and smart TVs for firmware storage.
2. Automotive: Employed in infotainment systems and advanced driver-assistance systems (ADAS) for firmware updates and data logging.
3. Industrial Applications: Utilized in programmable logic controllers (PLCs) and robotics for code storage.
4. Internet of Things (IoT): Supports edge devices and smart sensors needing non-volatile storage.
5. Networking Equipment: Applied in routers and switches for configuration and firmware storage.
Its versatility and reliability make it suitable for diverse sectors requiring efficient data retention.