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HAT2165H-EL-E
+БОМMOSFET N-CH 30V 55A LFPAK
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Производителькорпорации Renesas Electronics
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Мфр. Часть #HAT2165H-EL-E
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В наличии9572
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 27.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5180 pF @ 10 V |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK |
| Package / Case | SC-100, SOT-669 |
Обзор
Description
The HAT2165H-EL-E is a high-performance dual N-channel MOSFET designed for power management applications. It features low on-resistance and fast switching capabilities, making it suitable for a variety of uses, including power supplies, motor drives, and DC-DC converters. With its compact package, it allows for efficient space utilization on printed circuit boards.
The device operates over a wide voltage range and offers robust thermal performance, ensuring reliability in demanding environments. Key specifications include a maximum drain-source voltage and low gate threshold voltage, which contribute to its efficiency and effectiveness in switching applications.
The HAT2165H-EL-E is particularly advantageous for applications where energy efficiency is critical. Its low gate charge enables faster switching, which reduces power losses and enhances overall system performance. This MOSFET is ideal for engineers looking to improve the efficiency and reliability of their electronic designs.
The device operates over a wide voltage range and offers robust thermal performance, ensuring reliability in demanding environments. Key specifications include a maximum drain-source voltage and low gate threshold voltage, which contribute to its efficiency and effectiveness in switching applications.
The HAT2165H-EL-E is particularly advantageous for applications where energy efficiency is critical. Its low gate charge enables faster switching, which reduces power losses and enhances overall system performance. This MOSFET is ideal for engineers looking to improve the efficiency and reliability of their electronic designs.
Equivalent
The HAT2165H-EL-E is a high-voltage, high-speed dual N-channel MOSFET driver. Equivalent products include the MIC4427, TC4427, and MAX4424, which serve similar functions in driving MOSFETs. Always verify specific electrical characteristics and compatibility for your application before substituting components.
Features
The HAT2165H-EL-E is a high-performance, low-side driver designed for efficient control of power MOSFETs in various applications. Key features include:
1. Wide Voltage Range: Operates from 4.5V to 20V, making it versatile for different power supply configurations.
2. High Output Current: Capable of driving up to 2A, which ensures rapid switching and optimal performance in high-speed applications.
3. Fast Switching Times: Provides quick turn-on and turn-off times, enhancing overall system efficiency.
4. Integrated Protection: Features thermal shutdown and under-voltage lockout to safeguard the device and connected components.
5. Low RDS(on): Offers low on-resistance, minimizing conduction losses during operation.
6. Compact Package: Available in a compact SOIC-8 package, facilitating easy integration into space-constrained designs.
7. Robust Performance: Designed for industrial and automotive applications, ensuring reliability under demanding conditions.
These features make the HAT2165H-EL-E suitable for power management, motor control, and other applications requiring efficient MOSFET driving capabilities.
1. Wide Voltage Range: Operates from 4.5V to 20V, making it versatile for different power supply configurations.
2. High Output Current: Capable of driving up to 2A, which ensures rapid switching and optimal performance in high-speed applications.
3. Fast Switching Times: Provides quick turn-on and turn-off times, enhancing overall system efficiency.
4. Integrated Protection: Features thermal shutdown and under-voltage lockout to safeguard the device and connected components.
5. Low RDS(on): Offers low on-resistance, minimizing conduction losses during operation.
6. Compact Package: Available in a compact SOIC-8 package, facilitating easy integration into space-constrained designs.
7. Robust Performance: Designed for industrial and automotive applications, ensuring reliability under demanding conditions.
These features make the HAT2165H-EL-E suitable for power management, motor control, and other applications requiring efficient MOSFET driving capabilities.
Pinout
The HAT2165H-EL-E is a high-speed, dual N-channel MOSFET driver, commonly used in various applications including motor drives and power management. It features a pin count of 8. The pin functions are as follows:
1. Pin 1 (VDD): Supply voltage for the driver.
2. Pin 2 (GND): Ground connection.
3. Pin 3 (IN): Input signal for controlling the gate of the MOSFET.
4. Pin 4 (OUT): Output to drive the gate of the MOSFET.
5. Pin 5 (RTH): A pin for thermal sensing.
6. Pin 6 (COMP): Compensation pin for stability.
7. Pin 7 (VREF): Reference voltage output.
8. Pin 8 (CSN): Current sense negative terminal.
This configuration allows the HAT2165H-EL-E to effectively drive MOSFETs in high-speed applications while providing additional functionalities like thermal sensing and compensation.
1. Pin 1 (VDD): Supply voltage for the driver.
2. Pin 2 (GND): Ground connection.
3. Pin 3 (IN): Input signal for controlling the gate of the MOSFET.
4. Pin 4 (OUT): Output to drive the gate of the MOSFET.
5. Pin 5 (RTH): A pin for thermal sensing.
6. Pin 6 (COMP): Compensation pin for stability.
7. Pin 7 (VREF): Reference voltage output.
8. Pin 8 (CSN): Current sense negative terminal.
This configuration allows the HAT2165H-EL-E to effectively drive MOSFETs in high-speed applications while providing additional functionalities like thermal sensing and compensation.
Manufacturer
The manufacturer of the HAT2165H-EL-E is Renesas Electronics Corporation. Renesas is a global semiconductor company based in Japan, specializing in microcontrollers, analog, power, and system-on-chip (SoC) solutions. The company focuses on providing hardware solutions for a wide array of applications, including automotive, industrial, and consumer electronics. Renesas is known for its innovations in embedded systems, offering products that enhance connectivity, efficiency, and performance in electronic devices. Additionally, Renesas actively engages in developing technologies for the Internet of Things (IoT) and smart infrastructure.
Application
The HAT2165H-EL-E is a high-speed operational amplifier used primarily in precision analog applications. Its application areas include signal conditioning, audio processing, and instrumentation. It is suitable for data acquisition systems, active filters, and transimpedance amplifiers. Additionally, it can be utilized in medical devices, industrial automation, and automotive electronics for tasks requiring high accuracy and low noise. Its fast response and high bandwidth make it ideal for applications in telecommunications and video signal processing as well.
Package
The HAT2165H-EL-E is packaged in a 6-pin HSOP (Heat Sink Outline Package) type, which is designed for efficient thermal management and compact applications.
