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HAT2168H-EL-E
+БОМMOSFET N-CH 30V 30A LFPAK
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Производителькорпорации Renesas Electronics
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Мфр. Часть #HAT2168H-EL-E
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В наличии7407
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 10 V |
| Power Dissipation (Max) | 15W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK |
| Package / Case | SC-100, SOT-669 |
| Base Product Number | HAT2168 |
Обзор
Description
HAT2168H-EL-E is a high-performance, low-noise operational amplifier designed for various analog applications. It features a wide supply voltage range, enabling it to operate effectively in different circuit configurations. With low input offset voltage and high common-mode rejection ratio (CMRR), the HAT2168H-EL-E ensures accurate signal amplification, making it suitable for precision measurement systems.
The device is optimized for low power consumption, which is ideal for battery-operated devices. It has a low total harmonic distortion (THD) and high slew rate, ensuring high fidelity in audio applications. Its compact package design facilitates easy integration into space-constrained environments.
Applications include instrumentation, audio processing, and signal conditioning, among others. Overall, the HAT2168H-EL-E is a versatile choice for engineers seeking reliable performance in their analog designs.
The device is optimized for low power consumption, which is ideal for battery-operated devices. It has a low total harmonic distortion (THD) and high slew rate, ensuring high fidelity in audio applications. Its compact package design facilitates easy integration into space-constrained environments.
Applications include instrumentation, audio processing, and signal conditioning, among others. Overall, the HAT2168H-EL-E is a versatile choice for engineers seeking reliable performance in their analog designs.
Equivalent
The HAT2168H-EL-E is a high-speed dual N-channel MOSFET driver. Equivalent products include the MIC4427, TC4420, and MAX4426, which also provide similar driving capabilities for MOSFETs in various applications. Always check specific datasheets for exact specifications and compatibility.
Features
The HAT2168H-EL-E is a high-speed, dual-channel operational amplifier designed for precision applications. Key features include:
1. Dual Channel: Two independent, high-performance op-amps in a single package.
2. Wide Supply Voltage Range: Operates from a dual supply of ±2V to ±15V, offering flexibility for various applications.
3. High Gain Bandwidth Product: Provides a gain bandwidth of up to 1.2 MHz, suitable for fast signal processing.
4. Low Input Offset Voltage: Ensures high accuracy with low offset voltage, typically around 0.5 mV.
5. Low Noise: Designed for minimal noise, making it ideal for sensitive applications.
6. Rail-to-Rail Output: Capable of swinging close to the supply rails, maximizing output range.
7. Small Package Size: Available in compact packages, aiding in space-constrained designs.
These features make the HAT2168H-EL-E suitable for applications in audio processing, instrumentation, and data acquisition systems.
1. Dual Channel: Two independent, high-performance op-amps in a single package.
2. Wide Supply Voltage Range: Operates from a dual supply of ±2V to ±15V, offering flexibility for various applications.
3. High Gain Bandwidth Product: Provides a gain bandwidth of up to 1.2 MHz, suitable for fast signal processing.
4. Low Input Offset Voltage: Ensures high accuracy with low offset voltage, typically around 0.5 mV.
5. Low Noise: Designed for minimal noise, making it ideal for sensitive applications.
6. Rail-to-Rail Output: Capable of swinging close to the supply rails, maximizing output range.
7. Small Package Size: Available in compact packages, aiding in space-constrained designs.
These features make the HAT2168H-EL-E suitable for applications in audio processing, instrumentation, and data acquisition systems.
Pinout
The HAT2168H-EL-E is an N-channel MOSFET driver with a pin count of 8. It is designed to drive high-side and low-side MOSFETs in various applications, including motor control and power management.
Pin Functions:
1. VDD: Power supply pin.
2. GND: Ground reference.
3. IN: Input control signal for driving the MOSFET.
4. OUT: Output pin that drives the gate of the MOSFET.
5. BOOT: Bootstrap capacitor connection for high-side MOSFET driving.
6. SW: Switch node, connecting to the source of the high-side MOSFET.
7. COM: Common connection for the low-side MOSFET.
8. UVLO: Under-voltage lockout pin to prevent operation below a certain voltage.
The device is suitable for applications requiring efficient switching and control of power devices.
Pin Functions:
1. VDD: Power supply pin.
2. GND: Ground reference.
3. IN: Input control signal for driving the MOSFET.
4. OUT: Output pin that drives the gate of the MOSFET.
5. BOOT: Bootstrap capacitor connection for high-side MOSFET driving.
6. SW: Switch node, connecting to the source of the high-side MOSFET.
7. COM: Common connection for the low-side MOSFET.
8. UVLO: Under-voltage lockout pin to prevent operation below a certain voltage.
The device is suitable for applications requiring efficient switching and control of power devices.
Manufacturer
The HAT2168H-EL-E is manufactured by Renesas Electronics Corporation, a global semiconductor company based in Japan. Renesas specializes in designing and manufacturing a wide range of microcontrollers, microprocessors, analog, and power devices, as well as system-on-chip (SoC) solutions. The company serves various industries including automotive, industrial, and consumer electronics.
Renesas is known for its focus on advanced technologies and innovation in the semiconductor sector, providing solutions that enhance connectivity and efficiency in electronic devices. They are also recognized for their commitment to sustainability and reliability in their product offerings.
Renesas is known for its focus on advanced technologies and innovation in the semiconductor sector, providing solutions that enhance connectivity and efficiency in electronic devices. They are also recognized for their commitment to sustainability and reliability in their product offerings.
Application
The HAT2168H-EL-E is a high-voltage, high-speed dual operational amplifier primarily used in applications such as audio signal processing, sensor interfacing, and industrial automation. Its features make it suitable for medical devices, telecommunications, and instrumentation systems. It can also be utilized in motor control and power management applications due to its ability to handle high gain and fast response times. The device is designed for low power consumption while maintaining performance, making it ideal for battery-operated and portable electronic devices.
Package
The HAT2168H-EL-E is packaged in a TO-220 type package. This package type is typically used for power transistors and features a heat sink for better thermal management.
