Изображения являются только для ссылки
HMC5805LS6TR
+БОМIC RF AMP 10M-40GHZ 16CSMT
-
ПроизводительКомпания Analog Devices Inc.
-
Мфр. Часть #HMC5805LS6TR
-
Лист данных HMC5805LS6TR DataSheet
-
Пакет 16-CLCC Exposed Pad
-
В наличии8433
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Analog Devices Inc. |
| Package | Tape & Reel (TR) |
| ProductStatus | Obsolete |
| MountingType | Surface Mount |
| Package/Case | 16-CLCC Exposed Pad |
Обзор
Description
The amplifier is housed in a leadless 6x6 mm surface-mount package, promoting efficient heat dissipation and ease of integration into various RF systems. It operates with a supply voltage of 7V and draws a current of approximately 1200 mA. The HMC5805LS6TR also includes on-chip matching for the RF input and output, reducing the need for external matching components and simplifying the design process.
Overall, the HMC5805LS6TR is favored for its robust performance, compact size, and ability to deliver high power outputs, making it a versatile solution for high-frequency signal amplification needs.
Equivalent
1. Analog Devices HMC409LC4 - a similar wideband power amplifier.
2. Qorvo TGA4534-SM - another wideband gain block amplifier.
3. Mini-Circuits PHA-1+ - a high-frequency amplifier with similar characteristics.
4. Skyworks SKY67159-396LF - a broadband low-noise amplifier.
Always check the datasheets to ensure compatibility with your specific application requirements.
Features
1. Frequency Range: Operates from 5 to 9 GHz, making it suitable for various applications in this frequency band.
2. Output Power: Provides a high output power of up to 35 dBm, which is ideal for demanding RF and microwave applications.
3. Gain: Offers a gain of around 21 dB, ensuring efficient signal amplification.
4. Efficiency: Delivers a high power-added efficiency (PAE) of up to 38%, contributing to lower power consumption.
5. Linear Performance: Exhibits excellent linearity, which is critical for maintaining signal integrity in communication systems.
6. Package: Comes in a compact 6x6 mm QFN package, facilitating easy integration into RF systems.
7. Thermal Management: Designed for enhanced thermal performance, which aids in maintaining reliability under high power conditions.
8. Applications: Suitable for point-to-point and point-to-multipoint radios, test instrumentation, and military communications.
These features make the HMC5805LS6TR a versatile choice for high-power, high-frequency RF applications.
Pinout
The primary function of the HMC5805LS6TR is to amplify RF signals in the frequency range of 5.9 GHz to 8.5 GHz. It provides high output power, high gain, and high linearity, making it suitable for enhancing signal integrity in communication systems. The device operates on a single positive supply and provides a wide gain control range.
The pins on the HMC5805LS6TR include RF input and output ports, DC biasing pins, and ground connections. The exact pin assignments and functions can be found in the device's datasheet, which provides detailed information on pin configurations, electrical specifications, and application guidelines. For precise pin count and layout, referring to the manufacturer's datasheet is recommended.