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IHW50N65R5
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IHW50N65R5
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Лист данных IHW50N65R5 DataSheet
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В наличии6300
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Brand | Infineon Technologies |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Packaging | Tube |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
| Technology | Si |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 175 C |
| Factory Pack Quantity | 240 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Configuration | Single |
| Collector - Emitter Voltage VCEO Max | 650 V |
| Collector - Emitter Saturation Voltage | 1.35 V |
| Continuous Collector Current at 25 C | 80 A |
| Pd - Power Dissipation | 282 W |
| Series | TRENCHSTOP 5 RC-H |
| Gate - Emitter Leakage Current | 100 nA |
| Operating Temperature | - 40 C to + 175 C |
| Tradename | TRENCHSTOP |
| Part # Aliases | SP001133104 IHW50N65R5XKSA1 |
| Unit Weight | 1.340411 oz |
Обзор
Description
The device features a robust construction that enhances thermal performance and reliability. Its optimized gate drive characteristics allow for easier integration into different circuit designs. The IHW50N65R5 also incorporates soft-switching technology to minimize electromagnetic interference (EMI) and improve overall system efficiency.
This IGBT is part of a broader family of devices aimed at delivering high performance in demanding environments, ensuring longevity and stability in various applications.
Equivalent
1. SiHG50N65 - from Infineon
2. FGA50N65 - from ON Semiconductor
3. IRG4PC50W - from Infineon
4. MIG50N65 - from Microsemi
Always verify specifications such as voltage, current, and switching speeds before substitution.
Features
1. Voltage Rating: A maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It has a continuous drain current (Id) of 50A, enabling it to handle substantial loads.
3. RDS(on): Low on-resistance (RDS(on)) of 0.5 ohms at 10V, which minimizes conduction losses and enhances efficiency.
4. Fast Switching: Designed for rapid switching, it provides improved performance in applications like switch-mode power supplies and inverters.
5. Thermal Performance: High thermal stability and a robust package allow for better heat dissipation.
6. Gate Threshold Voltage: A gate threshold voltage (Vgs(th)) ranging from 2V to 4V facilitates easy drive requirements.
These features make the IHW50N65R5 ideal for applications in renewable energy systems, automotive, and industrial power supplies.
Pinout
1. Gate (G): Controls the MOSFET operation; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): The terminal where current flows out of the MOSFET; connected to the load.
3. Source (S): The terminal where current enters the MOSFET; typically connected to ground in common-source configurations.
4. Tab (or Heatsink): Often connected to the source terminal for heat dissipation purposes.
The IHW50N65R5 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 50A. It is commonly used in power supply circuits, motor control, and other high-power applications.
Manufacturer
Application
1. Industrial Drives - Used in motor control and variable frequency drives.
2. Renewable Energy - Employed in solar inverters and wind turbine converters.
3. Power Supply - Utilized in switch-mode power supplies (SMPS) and UPS systems.
4. Welding Equipment - Ideal for inverter-based welding systems.
5. HVAC Systems - Used in heat pumps and air conditioning compressors.
Its efficiency and thermal performance make it suitable for high-power applications.