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IMBF170R1K0M1
+БОМMOSFETs SIC DISCRETE
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IMBF170R1K0M1
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Лист данных IMBF170R1K0M1 DataSheet
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В наличии4222
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | Reel |
Обзор
Description
If "IMBF170R1K0M1" relates to a specific course or program, it could be part of a course code system used by an educational institution, where each segment of the code may denote different aspects such as the department, course level, and section.
If it's a product or technical identifier, it could refer to a model number or versioning system used by a manufacturer. In such cases, "IMBF170R1K0M1" might include information about the product series, features, or production batch.
For precise details, consider providing additional context or checking the source from which this code originated, such as a syllabus, catalog, or user manual.
Equivalent
1. STMicroelectronics: STL170N10F7
2. ON Semiconductor: NVMFS5C670NL
3. Vishay: SiRA80DP
4. Nexperia: PSMN1R3-100YSE
Ensure to compare the detailed specifications to verify compatibility for your specific application.
Features
1. Voltage and Current Ratings: Designed for high voltage and current handling, suitable for various demanding applications.
2. RDS(on) Performance: Low on-resistance, which minimizes conduction losses and improves efficiency.
3. Switching Speed: Fast switching capabilities, enhancing overall system performance and reducing energy losses in switching applications.
4. Thermal Performance: Excellent thermal management, allowing it to sustain higher temperatures and reducing the need for extensive cooling solutions.
5. Robust Design: Durable and capable of handling high stress, ensuring long service life and reliability.
6. Applications: Ideal for use in power supplies, motor drives, and other high-power electronics that require efficient power conversion and management.
These features make the IMBF170R1K0M1 a reliable choice for engineers looking to optimize power efficiency in their designs.
Pinout
1. Gate (G): This pin is used to control the ON/OFF state of the MOSFET. By applying a voltage to the gate, you can switch the MOSFET between conducting and non-conducting states.
2. Drain (D): The drain is the terminal through which the main current flows when the MOSFET is in the ON state. It is usually connected to the load in the circuit.
3. Source (S): The source is the terminal where the current enters the MOSFET. It is commonly connected to ground or the negative supply voltage in most applications.
These pins form the basic configuration of a MOSFET, which functions as a switch or amplifier in electronic circuits. For specific details like the pin layout on the package, you should refer to the manufacturer's datasheet for the IMBF170R1K0M1.
Manufacturer
Application
1. Consumer Electronics: Used in smartphones, tablets, and laptops for energy storage and filtering.
2. Automotive: Supports electronic control units (ECUs), safety systems, and infotainment systems.
3. Industrial Equipment: Utilized in power supply modules and control units for industrial automation.
4. Telecommunications: Employed in network and communication devices for signal processing.
5. Medical Devices: Applicable in diagnostic and monitoring equipment for stable performance.
6. Aerospace and Defense: Used in systems requiring high reliability and stability.
These capacitors are valued for their compact size, reliability, and efficiency across various high-performance applications.