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IPB020N08N5
+БОМMOSFETs TRENCH 40<-<100V
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IPB020N08N5
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Лист данных IPB020N08N5 DataSheet
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В наличии22696
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | Reel |
Обзор
Description
- IPB: May stand for the department or faculty offering the course.
- 020: Could represent the level or year of study; for instance, undergraduate or beginner level.
- N08N5: Often indicates a unique identifier for the course, possibly related to the specific subject or course sequence.
To understand "Introduction to IPB020N08N5," you would generally expect it to cover foundational concepts relevant to the subject area designated by the course code. This might include an overview of key themes, terminologies, methodologies, and objectives pertinent to the discipline. It could also outline the learning outcomes, assessment methods, and any prerequisites. For precise information, you would typically refer to the course syllabus or contact the academic department responsible for the course.
Equivalent
1. IRF3205 by International Rectifier
2. FDB7030BL by ON Semiconductor
3. STP80NF10 by STMicroelectronics
4. FDP7030BL by On Semiconductor
Make sure to check datasheets for exact specifications to ensure compatibility, as parameters like voltage, current, and Rds(on) can vary slightly between different models.
Features
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 80V and can handle a continuous drain current (I_D) of around 20A, depending on the specific conditions such as temperature and heat dissipation.
2. R_DS(on): This MOSFET offers a low on-resistance, contributing to reduced conduction losses and improved efficiency in power applications.
3. Technology: It is built using Infineon's OptiMOS™ technology, which is known for enhancing performance in terms of switching speed and efficiency.
4. Package Type: The device is commonly available in a TO-220 package, which provides reliable thermal performance and ease of mounting.
5. Applications: The IPB020N08N5 is suitable for use in synchronous rectification, DC-DC converters, and other applications requiring efficient power management.
These features make it an excellent choice for applications demanding high efficiency and reliability in power conversion.
Pinout
1. Pin 1 (Gate): This is the control pin that modulates the conduction state of the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Pin 2 (Drain): This pin is connected to the load and is one of the main current-carrying terminals of the MOSFET.
3. Pin 3 (Source): This pin is connected to the ground or the lower potential side of the circuit, completing the current path through the device.
The IPB020N08N5 is an N-channel MOSFET, known for its low on-resistance and high efficiency, making it suitable for power management applications. It is designed to handle high currents and voltages, thus commonly used in applications like power supplies, motor drives, and DC-DC converters.
Manufacturer
Application
1. Power Management: Used in DC-DC converters and voltage regulation circuits for efficient power management in electronic devices.
2. Automotive Electronics: Utilized in motor drivers, lighting systems, and battery management systems.
3. Industrial Systems: Applied in motor controls, robotics, and power supplies for industrial automation.
4. Consumer Electronics: Found in power adapters, chargers, and LED drivers.
5. Renewable Energy Systems: Integrated into inverters and power optimizers for solar and wind energy solutions.
These applications benefit from the MOSFET's efficiency and reliability in high-performance scenarios.