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IPB072N15N3G
+БОМ-
Производителькомпанией Infineon Technologies
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Мфр. Часть #IPB072N15N3G
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В наличии5887
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Manufacturer | Infineon Technologies |
| Package | TO-263-3 |
| OperatingTemperature | -55℃~+175℃ |
| RDS(on) | 7.2mΩ@10V,100A |
| DraintoSourceVoltage | 150V |
| Pd-PowerDissipation | 300W |
| Current-ContinuousDrain(Id) | 100A |
| ReverseTransferCapacitance(Crss@Vds) | 10pF@75V |
| InputCapacitance(Ciss@Vds) | 5.47nF@75V |
| GateThresholdVoltage(Vgs(th)@Id) | 4V |
| GateCharge(Qg) | 93nC@10V |
| Number | 1 N-channel |
Обзор
Description
Key specifications include a low RDS(on) value, which minimizes conduction losses and enhances efficiency. The device also has a fast switching speed, beneficial for high-frequency applications. Its package type usually is a TO-220 or similar, which allows for effective heat dissipation.
The IPB072N15N3G is often used in automotive, industrial, and consumer electronics where reliability and performance are critical. When designing circuits with this MOSFET, it's essential to consider thermal management and proper gate drive to ensure optimal operation.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, allowing it to handle high voltages.
2. Current Rating: The continuous drain current (I_D) is rated at 72A, making it suitable for high-current applications.
3. R_DS(on): The on-resistance is low, typically around 0.072 ohms, which helps reduce power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, facilitating easy drive from low-voltage logic.
5. Package: It comes in a TO-220 package, offering good thermal performance and ease of heat dissipation.
6. Applications: It is ideal for use in DC-DC converters, motor drives, and other high-efficiency power management systems.
Overall, the IPB072N15N3G is a robust MOSFET suitable for demanding power applications.
Pinout
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - The drain pin is where the load is connected and where the current exits the MOSFET when it is in the "on" state.
3. Source (S) - This pin connects to ground or the negative side of the circuit, allowing current to flow into the drain when the gate is activated.
The IPB072N15N3G is suitable for applications like power management, motor control, and DC-DC converters, providing low on-resistance and high-speed switching capabilities.
Manufacturer
Infineon is particularly known for its expertise in power management and energy efficiency, serving as a key player in the development of technologies for smart mobility, IoT, and renewable energy applications. The company emphasizes innovation and sustainability, contributing to advancements in electronic systems that improve energy efficiency and reduce carbon footprints. Infineon operates globally, with a strong presence in Europe, Asia, and North America, and it is recognized for its commitment to quality and reliability in the semiconductor industry.
Application
1. Switching Regulators: Used in DC-DC converters for efficient voltage regulation.
2. Motor Control: Employed in driving motors in electric vehicles and robotics.
3. Power Supplies: Utilized in high-efficiency power supply designs.
4. Battery Management Systems: Used for protecting and managing lithium-ion batteries.
5. LED Drivers: Applied in driving LED lighting systems efficiently.
The MOSFET's low on-resistance and fast switching capabilities make it suitable for these high-performance applications.