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IPB107N20N3G
+БОМ-
Производителькомпанией Infineon Technologies
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Мфр. Часть #IPB107N20N3G
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В наличии2966
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Manufacturer | Infineon Technologies |
| Package | TO-263-3 |
| OperatingTemperature | -55℃~+175℃ |
| RDS(on) | 10.7mΩ@10V,88A |
| DraintoSourceVoltage | 200V |
| Pd-PowerDissipation | 300W |
| Current-ContinuousDrain(Id) | 88A |
| ReverseTransferCapacitance(Crss@Vds) | 533pF@100V |
| InputCapacitance(Ciss@Vds) | 7.1nF@100V |
| Type | 1 N-channel |
| GateThresholdVoltage(Vgs(th)@Id) | 4V |
| GateCharge(Qg) | 87nC@10V |
Обзор
Description
The device features a fast switching capability, making it ideal for use in switching power supplies, motor drives, and other applications requiring rapid on/off cycles. The IPB107N20N3G also includes a robust gate oxide design, enhancing reliability under various operating conditions.
Additionally, it is packaged in a TO-220 form factor, allowing for effective heat dissipation and easy mounting in circuit designs. Overall, the IPB107N20N3G is a versatile MOSFET that meets the demands of contemporary power electronic applications.
Equivalent
Features
1. Low RDS(on): Offers low on-resistance, enabling efficient power management and reduced heat generation, which enhances overall system performance.
2. High Voltage Rating: Supports a maximum drain-source voltage (VDS) of 200V, making it suitable for high-voltage applications.
3. High Current Capability: Can handle a continuous drain current (ID) of up to 107A, allowing it to manage significant loads in power circuits.
4. Fast Switching: Optimized for high-speed switching applications, which is beneficial in power converters and inverters.
5. Thermal Performance: Features a TO-220 package that provides excellent thermal performance, facilitating efficient heat dissipation.
6. Low Gate Charge: Low gate charge (Qg) ensures minimal drive power is required, improving the efficiency of switching operations.
Overall, the IPB107N20N3G is ideal for applications such as motor drives, power supplies, and other power management systems.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the MOSFET on or off.
2. Drain (D): This is the pin where the load is connected. The current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit.
The device is characterized by its low on-resistance, high current handling capability, and fast switching speed, making it suitable for applications like power supplies, motor drivers, and other power switching circuits.
Manufacturer
Infineon plays a significant role in the global semiconductor market, emphasizing innovation and sustainability in its product offerings. The IPB107N20N3G itself is a N-channel MOSFET, which is commonly used in power management applications due to its high efficiency and performance characteristics. This makes it suitable for a variety of applications, including DC-DC converters, motor drives, and power supply circuits.
Application
1. DC-DC Converters: Efficient switching in voltage regulation circuits.
2. Motor Drivers: Control of electric motors in automotive and industrial applications.
3. Power Supplies: Used in uninterruptible power supplies (UPS) and power adapters.
4. LED Drivers: Efficiently managing current in LED lighting systems.
5. Battery Management Systems: Enhancing efficiency in charging and discharging processes.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in various electronic systems.