IPB60R380C6

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IPB60R380C6

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Спецификации

Атрибут Ценность
Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity:Factory Pack Quantity 1000
Technology Si
REACH - SVHC Details
Mounting Style SMD/SMT
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 10.6 A
Rds On - Drain-Source Resistance 340 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Qg - Gate Charge 32 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 83 W
Channel Mode Enhancement
Tradename CoolMOS
Configuration Single
Fall Time 9 ns
Height 4.4 mm
Length 10 mm
Rise Time 10 ns
Series CoolMOS C6
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 15 ns
Width 9.25 mm
Part # Aliases IPB6R38C6XT SP000660634 IPB60R380C6ATMA1
Unit Weight 4 g
Package/Case D2PAK-3 (TO-263-3)
Delivery Restrictions Mouser does not presently sell this product in your region.

Обзор

Description

The IPB60R380C6 is a high-performance N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of up to 38A, making it suitable for high-voltage and high-current applications. The device is optimized for fast switching speeds, low on-resistance (R_DS(on)), and high thermal stability, which enhances efficiency in power conversion systems.
Typically used in applications like switch-mode power supplies (SMPS), motor drives, and inverters, the IPB60R380C6 can help improve the performance of various electronic circuits. Additionally, its TO-220 package provides efficient heat dissipation, contributing to the reliability and longevity of the device in demanding environments.
Overall, the IPB60R380C6 is a versatile component for engineers and designers seeking efficient solutions in power management and electronic control systems.

Equivalent

The IPB60R380C6 is a N-channel IGBT (Insulated Gate Bipolar Transistor). Equivalent products include the Infineon IGBT series such as the IPB60R380C7 or similar devices from manufacturers like STMicroelectronics (STGW30H120) or ON Semiconductor (NTP60N06). Always check specific datasheets for voltage, current ratings, and switching characteristics to ensure compatibility in your application.

Features

The IPB60R380C6 is a high-performance N-channel MOSFET designed for various applications, including industrial and automotive systems. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current of up to 38A, providing robust current-carrying capability.
3. RDS(on): It boasts a low on-resistance (RDS(on)) of around 0.38 ohms at a gate-source voltage (Vgs) of 10V, which enhances efficiency and reduces power losses.
4. Gate Threshold Voltage: The threshold voltage (Vgs(th)) is between 2V and 4V, allowing for easy drive requirements.
5. Fast Switching: It features fast switching speeds, making it ideal for applications such as power supplies, converters, and motor drives.
6. Package Type: Typically available in a TO-220 package, facilitating convenient heat dissipation and mounting in various designs.
Overall, the IPB60R380C6 is an excellent choice for efficient power management in demanding environments.

Pinout

The IPB60R380C6 is an N-channel MOSFET manufactured by Infineon. It comes in a TO-220 package, which typically has three pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The terminal through which the current flows out when the device is on.
3. Source (S) - The terminal connected to the ground or the lower potential in the circuit.
This MOSFET is designed for high-efficiency applications, featuring a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 38A. It is suitable for use in power supplies, motor drives, and other high-voltage switching applications. The low on-state resistance (R_DS(on)) enables reduced power losses and improved thermal performance.

Manufacturer

The IPB60R380C6 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in semiconductor solutions, particularly in the fields of power management, automotive, and security technologies. The company designs and produces a wide range of products, including microcontrollers, sensors, and power semiconductors, which are used in various applications such as automotive electronics, industrial equipment, and consumer electronics. Founded in 1999 as a spin-off from Siemens AG, Infineon has established itself as a key player in the semiconductor industry, focusing on innovation and sustainability in its product offerings.

Application

The IPB60R380C6 is an N-channel MOSFET primarily used in high-power applications. Key application areas include:
1. Industrial Motor Drives: Used in control circuits for motors.
2. Power Supplies: Efficient in switch-mode power supplies (SMPS) and converters.
3. Automotive Applications: Utilized in electric vehicle powertrains and battery management systems.
4. Renewable Energy Systems: Employed in solar inverters and wind turbine controllers.
5. Heating Systems: Used in electronic heating applications.
6. Consumer Electronics: Implemented in high-efficiency power management systems.
Its high voltage and current ratings make it suitable for demanding applications.

Package

The IPB60R380C6 is an IGBT transistor typically packaged in a TO-247 format. This package type allows for efficient heat dissipation and is commonly used in high-power applications.

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