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IPD320N20N3G
+БОМ-
Производителькомпанией Infineon Technologies
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Мфр. Часть #IPD320N20N3G
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В наличии6078
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Manufacturer | Infineon Technologies |
| Package | TO-252-2 |
| OperatingTemperature | -55℃~+175℃ |
| RDS(on) | 32mΩ@10V,34A |
| DraintoSourceVoltage | 200V |
| Pd-PowerDissipation | 136W |
| Current-ContinuousDrain(Id) | 34A |
| ReverseTransferCapacitance(Crss@Vds) | 180pF@100V |
| GateThresholdVoltage(Vgs(th)@Id) | 4V |
| GateCharge(Qg) | 29nC@10V |
| Number | 1 N-channel |
| InputCapacitance(Ciss) | 2.35nF@100V |
Обзор
Description
This MOSFET incorporates advanced technology for improved thermal performance, making it ideal for high-efficiency designs. Its fast switching capabilities reduce switching losses, enhancing overall system efficiency.
The package design facilitates efficient heat dissipation, which is critical in high-power applications. Additionally, the IPD320N20N3G is characterized by a low gate charge (Qg), allowing for faster switching speeds and lower drive requirements.
Overall, the IPD320N20N3G is an excellent choice for engineers seeking reliable, efficient, and powerful components in demanding electronic applications.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 320A, providing robust performance in demanding environments.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of around 8.5 mΩ, which enhances efficiency by reducing power loss during operation.
4. Fast Switching: The MOSFET enables rapid switching, making it ideal for applications in power supplies, inverters, and motor drives.
5. Package Type: It comes in a TO-220 package, which provides good thermal management and ease of heat dissipation.
6. Thermal Resistance: The device features low thermal resistance, allowing for efficient heat management in high-power scenarios.
Overall, the IPD320N20N3G is suited for applications requiring high efficiency and reliability in power management.
Pinout
1. Gate (G): Controls the MOSFET, allowing it to switch on or off.
2. Drain (D): The terminal through which the load current flows when the MOSFET is on.
3. Source (S): The terminal that connects to ground or the negative side of the circuit.
The device is optimized for high efficiency and performance in power applications, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 320A at a specified case temperature. It is commonly used in applications such as power supplies, motor drives, and other high-power switching applications.
For specific applications, it is essential to refer to the datasheet for detailed electrical characteristics and thermal performance.