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IPD60R360P7
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IPD60R360P7
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Лист данных IPD60R360P7 DataSheet
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В наличии9047
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
Обзор
Description
This MOSFET features low on-resistance, which enhances efficiency by reducing power loss during operation. It typically has a fast switching speed, making it ideal for applications like switch-mode power supplies, motor drives, and inverters.
The IPD60R360P7 is often used in automotive, industrial, and renewable energy systems due to its reliability and robust performance under demanding conditions. Its compact package and thermal management characteristics allow for effective heat dissipation, further improving its operational longevity. Overall, it is a versatile component for engineers looking to design efficient and reliable power electronic circuits.
Equivalent
Features
1. Voltage Rating: It has a V_DS (drain-source voltage) rating of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current of up to 60A, providing robust performance in demanding conditions.
3. R_DS(on): The on-resistance is low, typically around 0.36 ohms, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for efficient drive with standard logic levels.
5. Package Type: It comes in a TO-220 package, facilitating easy heat dissipation and mounting in various designs.
6. Switching Speed: The MOSFET features fast switching capabilities, making it ideal for applications such as converters and inverters.
These characteristics make the IPD60R360P7 suitable for power management, motor control, and renewable energy systems.
Pinout
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The current-carrying terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative side of the power supply.
This MOSFET is designed for high-efficiency applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) rating of 60A. Its low on-resistance contributes to reduced power losses in circuit designs.