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IPD60R600C6
+БОМMOSFETs N-Ch 600V 7.3A DPAK-2 CoolMOS C6
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IPD60R600C6
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Лист данных IPD60R600C6 DataSheet
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В наличии15568
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | MouseReel |
| Standard Pack Qty | 2500 |
Обзор
Description
Key features of the IPD60R600C6 include low on-resistance, which ensures minimal power loss and improved energy efficiency. This MOSFET also offers fast switching performance, reducing the time it takes to transition between states, thus improving overall system performance and thermal management. Its design aims to minimize electromagnetic interference (EMI), enhancing compatibility with sensitive electronic circuits.
Overall, the IPD60R600C6 provides a reliable solution for power systems requiring high efficiency, fast switching, and robustness, making it ideal for industrial applications, electric vehicles, and renewable energy systems.
Equivalent
1. STMicroelectronics' STF21NM60N
2. Nexperia's PSMN3R4-60PS,127
3. ON Semiconductor's FDPF12N60NZ
4. Vishay's SiHG22N60E-GE3
Always verify specifications like voltage, current, Rds(on), and package type before substituting to ensure compatibility with your application.
Features
1. N-channel MOSFET: It is designed for efficient switching applications.
2. 600V Drain-Source Voltage: This high voltage capacity makes it suitable for high-power applications.
3. 0.6Ω Rds(on): Provides relatively low on-state resistance, leading to reduced power losses.
4. Compact Package: Typically comes in a TO-252 (DPAK) package, facilitating space-saving PCB designs.
5. Fast Switching Speed: Designed for high-speed operation, enhancing efficiency in switching applications.
6. Low Gate Charge: Minimizes the drive requirements and enhances switching efficiency.
7. Enhanced Thermal Performance: Capable of handling high temperatures, which improves reliability and performance stability.
8. Robust Design: Provides durability in demanding environments, suitable for industrial and consumer electronics.
These features make the IPD60R600C6 ideal for power conversion, power management, and other high-efficiency applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching. A voltage applied here determines whether the MOSFET is in the on (conducting) or off (non-conducting) state.
2. Drain (D): This is the terminal where the principal current flows out of the MOSFET. It is one of the main current-carrying terminals.
3. Source (S): This is the terminal where the principal current enters the MOSFET. It's the second main current-carrying terminal.
There is also a fourth connection, the tab, which is typically electrically connected to the drain and used for heat dissipation.
The IPD60R600C6 is designed for efficiency, offering low on-resistance and reduced switching losses, making it suitable for applications such as switch-mode power supplies and DC-DC converters.
Manufacturer
Application
1. Switching Power Supplies: Used in AC-DC and DC-DC converters for high-frequency switching.
2. Motor Drives: Suitable for driving motors in industrial and consumer applications.
3. Solar Inverters: Enhances efficiency in photovoltaic inverters by reducing conduction and switching losses.
4. Uninterruptible Power Supplies (UPS): Ensures reliable power delivery and improved energy efficiency.
5. LED Drivers: Utilized in high-efficiency LED lighting systems for better power management.
The IPD60R600C6 is ideal for applications demanding low power loss and compact design.