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IPD65R600C6
+БОМ-
Производителькомпанией Infineon Technologies
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Мфр. Часть #IPD65R600C6
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Лист данных IPD65R600C6 DataSheet
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В наличии2698
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 2500 |
| Technology | Si |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| REACH - SVHC | Details |
| Mounting Type | SMD/SMT |
| Package / Case | DPAK-3 (TO-252-3) |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 7.3 A |
| Rds On | 540 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3.5 V |
| Qg - Gate Charge | 23 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 63 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 13 ns |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Rise Time | 9 ns |
| Series | CoolMOS C6 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 80 ns |
| Typical Turn - On Delay Time | 12 ns |
| Width | 6.22 mm |
| Part # Aliases | IPD65R6C6XT SP000745020 IPD65R600C6BTMA1 |
| Unit Weight | 0.011640 oz |
Обзор
Description
This MOSFET incorporates advanced technological designs, including a planar layout that improves thermal performance and reliability. It is commonly used in switching power supplies, motor drives, and inverters, making it a versatile component in power electronics.
The IPD65R600C6 is also characterized by fast switching speeds, enabling better performance in high-frequency applications. It is housed in a TO-247 package, which allows for efficient heat dissipation. Overall, the IPD65R600C6 is an ideal choice for engineers seeking robust and efficient solutions in power management applications.
Equivalent
Features
1. Voltage Rating: It can withstand a maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: It supports a continuous drain current (I_D) of up to 65A, making it suitable for high-power applications.
3. RDS(on): The on-resistance is very low, typically around 0.65 ohms, which minimizes conduction losses.
4. Gate Threshold Voltage: The V_GS(th) is in the range of 2-4V, allowing for easier control by low-voltage gate drivers.
5. Package Type: It comes in a TO-247 package, facilitating good thermal management.
6. Fast Switching: Designed for high-speed switching applications, it helps reduce switching losses.
7. Applications: Ideal for use in power supplies, motor drives, and other high-voltage circuits.
These characteristics make the IPD65R600C6 suitable for various industrial and automotive applications where performance and efficiency are critical.
Pinout
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to this pin turns the device on or off.
2. Drain (D) - The drain pin is where the current flows out of the MOSFET when it is turned on.
3. Source (S) - The source pin is where the current enters the MOSFET.
4. Body Diode (internal) - The device includes an intrinsic body diode between the drain and source, allowing current to flow in the reverse direction when necessary.
5. Tab (or heatsink) - This is typically connected to the source and is used for heat dissipation.
The device is designed for high-voltage applications, with a maximum drain-source voltage of 600V and a continuous drain current of up to 65A.
Manufacturer
Application
1. Switching Power Supplies: For efficient power conversion in AC-DC and DC-DC applications.
2. Motor Drives: Used in inverter circuits for driving electric motors in industrial and automotive sectors.
3. Power Management: Employed in battery management systems and energy storage applications.
4. Lighting: Suitable for LED drivers and dimming applications.
5. Audio Amplifiers: Utilized in Class D amplifiers for high efficiency.
Its low on-resistance and high voltage ratings make it ideal for these applications, providing improved efficiency and thermal performance.