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IPD90N06S405ATMA2
+БОМMOSFET N-CH 60V 90A TO252-31
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IPD90N06S405ATMA2
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Лист данных IPD90N06S405ATMA2 DataSheet
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В наличии8305
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Infineon Technologies,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 90A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 5.1mOhm @ 90A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 60µA |
| Gate Charge(Qg)(Max) @ Vgs | 81 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6500 pF @ 25 V |
| Power Dissipation (Max) | 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 |
Обзор
Description
The IPD90N06S4-05 is a N-channel MOSFET designed for use in various electronic applications. It is part of Infineon's OptiMOS™ 4 series, known for offering excellent performance in terms of efficiency and thermal management. The MOSFET has a voltage rating of 60V and a continuous current rating of 90A, making it suitable for high-current applications. It features a low on-state resistance, which minimizes power loss and improves overall system efficiency.
This component is often used in power management applications, including DC-DC converters, motor drives, and power supplies. It is housed in a TO-252 package, which provides a compact and robust form factor for surface-mount applications. The IPD90N06S4-05 is designed for fast switching, which is beneficial in high-frequency applications, contributing to reduced switching losses and improved performance.
Overall, this MOSFET is a versatile component suitable for a variety of industrial and consumer applications where high efficiency and reliability are critical.
This component is often used in power management applications, including DC-DC converters, motor drives, and power supplies. It is housed in a TO-252 package, which provides a compact and robust form factor for surface-mount applications. The IPD90N06S4-05 is designed for fast switching, which is beneficial in high-frequency applications, contributing to reduced switching losses and improved performance.
Overall, this MOSFET is a versatile component suitable for a variety of industrial and consumer applications where high efficiency and reliability are critical.
Equivalent
The IPD90N06S405ATMA2 is an N-channel MOSFET produced by Infineon Technologies. Equivalent products can include:
1. IRFZ44N by International Rectifier.
2. FDP6030BL by ON Semiconductor.
3. STP60NF06 by STMicroelectronics.
4. FQP50N06 by Fairchild Semiconductor.
These equivalents are based on similar voltage, current ratings, and package types, but always verify datasheets to ensure compatibility with your specific application requirements.
1. IRFZ44N by International Rectifier.
2. FDP6030BL by ON Semiconductor.
3. STP60NF06 by STMicroelectronics.
4. FQP50N06 by Fairchild Semiconductor.
These equivalents are based on similar voltage, current ratings, and package types, but always verify datasheets to ensure compatibility with your specific application requirements.
Features
The IPD90N06S4-05ATMA2 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power management applications. Key features include:
1. N-Channel MOSFET: This device features an N-channel, which is commonly used for high-side switching.
2. Low On-Resistance: It offers low on-resistance, typically around 0.005 Ohms, which contributes to higher efficiency by reducing power losses.
3. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 90A, making it suitable for high-power applications.
4. Fast Switching: The device is designed for fast switching speeds, which is critical for efficiency in power conversion applications.
5. Thermal Performance: It has good thermal performance, with a low thermal resistance, enhancing reliability and stability under high power loads.
6. Package Type: Typically available in a TO-252 package, which is compact and allows for effective heat dissipation.
These features make the IPD90N06S4-05ATMA2 suitable for automotive and industrial applications where efficient power management is crucial.
1. N-Channel MOSFET: This device features an N-channel, which is commonly used for high-side switching.
2. Low On-Resistance: It offers low on-resistance, typically around 0.005 Ohms, which contributes to higher efficiency by reducing power losses.
3. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 90A, making it suitable for high-power applications.
4. Fast Switching: The device is designed for fast switching speeds, which is critical for efficiency in power conversion applications.
5. Thermal Performance: It has good thermal performance, with a low thermal resistance, enhancing reliability and stability under high power loads.
6. Package Type: Typically available in a TO-252 package, which is compact and allows for effective heat dissipation.
These features make the IPD90N06S4-05ATMA2 suitable for automotive and industrial applications where efficient power management is crucial.
Pinout
The IPD90N06S4-05ATMA2 is a power MOSFET manufactured by Infineon Technologies. It typically comes in a TO-252 package, which is also referred to as DPAK. This package has three pins:
1. Gate (G): This pin is used to control the MOSFET's operation by applying the appropriate driving voltage.
2. Drain (D): This pin is where the main current flows into the MOSFET when it is conducting.
3. Source (S): This pin serves as the return path for the current that flows from the drain when the MOSFET is on.
The IPD90N06S4-05ATMA2 is designed for use in high-efficiency power management applications, boasting a low on-resistance and fast switching capabilities. It is suitable for applications such as DC-DC converters, motor drives, and other power electronic systems. Always refer to the specific datasheet for detailed electrical characteristics and recommended operating conditions.
1. Gate (G): This pin is used to control the MOSFET's operation by applying the appropriate driving voltage.
2. Drain (D): This pin is where the main current flows into the MOSFET when it is conducting.
3. Source (S): This pin serves as the return path for the current that flows from the drain when the MOSFET is on.
The IPD90N06S4-05ATMA2 is designed for use in high-efficiency power management applications, boasting a low on-resistance and fast switching capabilities. It is suitable for applications such as DC-DC converters, motor drives, and other power electronic systems. Always refer to the specific datasheet for detailed electrical characteristics and recommended operating conditions.
Manufacturer
The IPD90N06S405ATMA2 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in a wide range of electronic components including power semiconductors, microcontrollers, sensors, and security solutions. The company is known for its innovations in automotive, industrial, and security applications. Infineon was originally a part of Siemens AG but became an independent entity in 1999. It focuses on providing solutions that enhance energy efficiency, mobility, and security across various industries.
Application
The IPD90N06S405ATMA2 is a power MOSFET typically used in a variety of applications due to its high efficiency and fast switching capabilities. Key application areas include:
1. Automotive Systems: Used in power management, drive circuits, and safety systems.
2. Industrial Automation: Suitable for motor control and power supplies.
3. Consumer Electronics: Utilized in power adapters and battery management systems.
4. Renewable Energy: Employed in solar inverters and energy storage systems.
5. Telecommunications: Applied in power distribution units and network infrastructure.
These applications benefit from the MOSFET's low on-resistance and thermal efficiency.
1. Automotive Systems: Used in power management, drive circuits, and safety systems.
2. Industrial Automation: Suitable for motor control and power supplies.
3. Consumer Electronics: Utilized in power adapters and battery management systems.
4. Renewable Energy: Employed in solar inverters and energy storage systems.
5. Telecommunications: Applied in power distribution units and network infrastructure.
These applications benefit from the MOSFET's low on-resistance and thermal efficiency.
Package
The IPD90N06S405ATMA2 is a power MOSFET supplied in a TO-252 package, also known as DPAK. This surface-mount package is commonly used for high-power devices, offering good thermal performance and compact size for efficient heat dissipation.
