IPP60R099C6

Изображения являются только для ссылки

IPP60R099C6

+БОМ

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IPP60R099C6

  • В наличии5211

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Technology Si
Packaging Tube
Brand Infineon Technologies
Product Type MOSFETs
Series CoolMOS C6
Factory Pack Quantity 500
Subcategory Transistors
Part # Aliases IPP6R99C6XK SP000687556 IPP60R099C6XKSA1
Mounting Type Through Hole
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Height 15.65 mm
Length 10 mm
Width 4.4 mm
Unit Weight 0.068784 oz
Package / Case TO-220-3
Configuration Single
Tradename CoolMOS
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain - Source Breakdown Voltage 600 V
Id - Continuous Drain Current 37.9 A
Rds On 90 mOhms
Vgs - Gate - Source Voltage - 20 V, + 20 V
Vgs th - Gate - Source Threshold Voltage 2.5 V
Qg - Gate Charge 119 nC
Pd - Power Dissipation 278 W
Channel Mode Enhancement
Fall Time 6 ns
Rise Time 12 ns
Transistor Type 1 N-Channel
Typical Turn - Off Delay Time 75 ns
Typical Turn - On Delay Time 15 ns

Обзор

Description

IPP60R099C6 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) produced by Infineon Technologies. It is designed for high-efficiency power switching applications, ideal for use in areas like power management, automotive, and industrial applications.
Key specifications include a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 99A, enabling it to handle significant power loads. Its low on-resistance (RDS(on)) of approximately 9.9 milliohms minimizes energy loss during operation, contributing to improved thermal performance and efficiency.
The device features a TO-220 package, allowing for effective heat dissipation, which is critical in high-power applications. Its fast switching speed makes it suitable for high-frequency applications, enhancing overall system performance.
Overall, the IPP60R099C6 is valued for its reliability and efficiency, making it a popular choice in modern electronic circuits requiring robust power management solutions.

Equivalent

The IPP60R099C6 is an N-channel MOSFET with a 60V rating and a 99 mΩ RDS(on). Equivalent products include:
1. IRF3205
2. STP60NF06
3. FQP60N06L
4. AUIRFS840
5. BSC027N06LS
Always verify specifications like voltage, current handling, and RDS(on) for compatibility in your application.

Features

The IPP60R099C6 is an N-channel MOSFET from Infineon's CoolMOS family, designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. RDS(on): Low on-resistance of 0.099 ohms, offering improved conduction efficiency.
3. Current Rating: Can handle a continuous drain current of up to 60A, allowing for robust performance in demanding tasks.
4. Gate Threshold Voltage (VGS): Typically around 2-4V, ensuring compatibility with various drive voltages.
5. Fast Switching: Optimized for fast switching speeds, reducing switching losses and increasing overall efficiency in power supply circuits.
6. Thermal Performance: High thermal stability with a maximum operating temperature of 175°C, enabling operation under harsh conditions.
7. Package Type: Available in a TO-220 package, providing effective heat dissipation.
These features make the IPP60R099C6 ideal for use in switch mode power supplies, renewable energy systems, and motor control applications.

Pinout

The IPP60R099C6 is a N-channel MOSFET with a pin count of 5. Its primary functions include switching and amplification in various electronic applications. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET operation, turning it on or off.
2. Drain (D): The terminal through which the current exits the MOSFET.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Tab (T): Typically connected to the source for thermal dissipation.
5. Body Diode: Integrated component allowing current flow from drain to source when in reverse bias.
This device is designed for high-efficiency applications, supporting a maximum continuous drain current of 60A and a maximum drain-source voltage of 100V. Its low on-resistance improves performance in power management systems.

Manufacturer

The IPP60R099C6 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing a wide range of semiconductor and system solutions, focusing on areas such as automotive, industrial power control, and security technologies. Infineon plays a crucial role in various sectors, including automotive electronics, renewable energy, and the Internet of Things (IoT). Their products include power semiconductors, microcontrollers, and sensors, which are essential in enhancing energy efficiency and performance in electronic devices.

Application

The IPP60R099C6 is a N-channel MOSFET designed for high-efficiency applications. Its key application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. DC-DC Converters: Ideal for buck, boost, and other converter topologies.
3. Motor Control: Suitable for driving electric motors in industrial and automotive applications.
4. Inverters: Utilized in renewable energy systems for converting DC to AC.
5. Consumer Electronics: Employed in various devices requiring efficient power management.
Its low on-resistance and high-speed switching capabilities enhance overall system performance.

Package

The IPP60R099C6 is typically offered in a TO-247 package type. This package is designed for high-power applications, providing efficient thermal management and easy mounting for power devices.

Продукты, связанные с IPP60R099C6