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IPW60R041P6
+БОМMOSFETs HIGH POWER PRICE/PERFORM
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IPW60R041P6
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Лист данных IPW60R041P6 DataSheet
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В наличии29874
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | Tube |
| Standard Pack Qty | 240 |
Обзор
Description
Key features of the IPW60R041P6 include a low on-resistance (R_DS(on)) of 0.041 ohms, high-speed switching capabilities, and a maximum drain-source voltage (V_DS) of 600V. It also supports high thermal performance and efficiency, reducing energy losses and improving system reliability. The device is built using an advanced superjunction technology that enables lower conduction and switching losses compared to traditional MOSFETs.
Overall, the IPW60R041P6 is valued for its ability to handle high power with minimal heat dissipation, making it suitable for applications demanding high efficiency and compact design.
Equivalent
Features
1. Voltage Rating: The device supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Low On-State Resistance: It features a low R_DS(on) of 0.041 ohms, reducing conduction losses and improving efficiency.
3. Fast Switching Performance: The device offers fast switching capabilities, which minimizes switching losses and enhances overall system efficiency.
4. Enhanced Thermal Performance: It is designed with a robust package that provides effective heat dissipation, critical for maintaining performance under high-power conditions.
5. Optimized for Low EMI: The MOSFET produces lower electromagnetic interference, aiding in the compliance with EMI standards.
6. Easy to Drive: The low gate charge (Q_g) makes it simpler to drive, reducing the effort needed for gate control and contributing to energy efficiency.
7. Applications: Ideal for applications such as power supplies, lighting, and industrial power systems where efficiency and reliability are paramount.
These features make the IPW60R041P6 a suitable choice for designers looking to optimize power efficiency and thermal management in high-voltage applications.
Pinout
1. Gate (G): This terminal is used to control the MOSFET, turning it on or off by applying the appropriate voltage.
2. Drain (D): This is the terminal through which the main current flows from the supply to the load, when the MOSFET is in the 'on' state.
3. Source (S): This is the terminal through which the current flows out of the MOSFET. It is usually connected to the ground in a typical power electronics circuit setup.
The IPW60R041P6 is part of Infineon's CoolMOS™ P6 series, known for its low conduction losses and high efficiency, suitable for various applications including power supplies and converters.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Used in power converters and inverters for efficient energy conversion.
2. Telecom Power Supplies: Provides stable power for telecom equipment.
3. Server and IT Infrastructure: Ensures reliable power delivery in data centers and IT hardware.
4. Industrial Power Applications: Suitable for motor drives and industrial automation systems.
5. Renewable Energy Systems: Used in solar inverters and wind power converters.
These applications leverage the MOSFET's low on-resistance and fast switching capabilities for improved performance and energy savings.