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IR2213PBF
+БОМIC GATE DRVR HALF-BRIDGE 14DIP
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IR2213PBF
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Лист данных IR2213PBF DataSheet
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Пакет PDIP-14
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В наличии4231
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tube |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 12V ~ 20V |
| LogicVoltage-VILVIH | 6V, 9.5V |
| Current-PeakOutput(SourceSink) | 2A, 2.5A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 1200 V |
| Rise/FallTime(Typ) | 25ns, 17ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | 14-DIP (0.300, 7.62mm) |
Обзор
Description
1. Foundational Theories: An overview of key IR theories such as realism, liberalism, constructivism, and critical theories.
2. Global Actors: Examination of major international actors, including states, international organizations, non-governmental organizations (NGOs), and multinational corporations (MNCs).
3. International Systems: Understanding the historical development and functioning of the international system, including the Westphalian state system.
4. Key Issues: Discussion of contemporary global issues such as conflict and security, globalization, human rights, and environmental challenges.
5. Analytical Skills: Development of skills to critically analyze international events and policies.
The course might also include case studies and simulations to provide practical insights into international diplomacy and policy-making. For precise details, consulting the course syllabus or institution offering the course is recommended.
Equivalent
Features
1. Input Logic Compatibility: Compatible with standard logic level inputs, allowing easy interfacing with microcontrollers and digital circuits.
2. Floating Channel: Can be used to drive N-channel power MOSFETs or IGBTs in a high-side configuration, which is fully operational up to 600V.
3. Gate Drive Capability: Offers 2A output current per channel, sufficient for driving large power MOSFETs and IGBTs.
4. Under-Voltage Lockout (UVLO): Provides protection by shutting down the gate driver in case of insufficient supply voltage, preventing potential damage.
5. Dead-Time Control: Integrated dead-time control to prevent shoot-through by ensuring a safe gap between the switching of high-side and low-side transistors.
6. Isolation: Provides high-side isolation from the low-side channel, allowing better safety and noise immunity.
7. Protection Features: Includes various protection features to ensure reliable operation in demanding environments.
These features make the IR2213PBF suitable for applications such as motor drives, inverters, and switch-mode power supplies.
Pinout
- VCC (2, 27): Supply voltage for the logic section.
- GND (1, 28): Ground connection.
- IN (3, 26): Logic inputs for the high-side and low-side drivers.
- FAULT (4): Fault output pin, indicating fault conditions.
- LIN (5): Low-side driver logic input.
- HIN (6): High-side driver logic input.
- VSS (7): Logic ground reference.
- VB (8, 21): High-side floating supply.
- VS (9, 20): High-side driver return.
- HO (10, 19): High-side output to the gate of high-side MOSFET/IGBT.
- LO (13, 16): Low-side output to the gate of low-side MOSFET/IGBT.
- SD (12): Shutdown input; active low.
- VDD (14): Low-side driver supply.
- COM (15): Low-side return.
Please refer to the manufacturer's datasheet for detailed specifications and exact pin assignments, since variations in package and configuration might exist.