IRF2804

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IRF2804

+БОМ

MOSFET N-CH 40V 75A TO220AB

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRF2804

  • Лист данных IRF2804 DataSheet

  • В наличии8074

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Спецификации

Атрибут Ценность
Series HEXFET®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 25 V
Power Dissipation (Max) 330W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Packaging Tube

Обзор

Description

IRF2804 is a N-channel enhancement-mode power MOSFET from International Rectifier (now Infineon). It is used as a high-current switching device in power electronics (switching power supplies, DC-DC converters, motor drives, inverters). It typically comes in common power packages (e.g., TO-220, D²PAK) with Gate–Drain–Source pins. The device requires a gate drive (around 10 V for low on-resistance; Vth is lower but not sufficient for full enhancement). Ratings (Drains current, Drain–Source voltage, Rds(on)) vary by variant, so consult the exact datasheet for your part. Important design notes: mount on a heatsink for thermal management, respect Vds and Vgs limits (usually up to ±20 V on Vgs), ensure proper gate drive, and use protection elements (snubbers, flyback diodes, TVS) as appropriate. For precise specs and package options, refer to the specific IRF2804 datasheet revision you’re using.

Equivalent

IRF2804 is an N‑channel power MOSFET. Equivalent parts depend on matching Vds, Id, Rds(on) and package. Common substitutes with similar ratings: IRF3205, IRFZ44N, IRLZ44N, FQP30N06L, STP55NF06 (and STP75NF75). For a precise cross, provide the IRF2804 datasheet (Vds, Id, Rds(on), package) and gate drive; I’ll map exact replacements.

Features

IRF2804 features (concise):
- N-channel HEXFET power MOSFET
- Vds: 55 V
- Id (continuous): ≈ 32 A
- Rds(on): ≈ 0.04 Ω (typ) at Vgs = 10 V
- Gate threshold: ~2–4 V; not a logic-level device (drive at ~10 V for low Rds(on))
- Fast switching with low gate charge
- Avalanche-rated for inductive-load switching
- Package options: TO-220AB and D2PAK; Pb-free/RoHS compliant
- Wide operating temp: up to ~150 °C junction
- Applications: SMPS, DC-DC converters, motor control, switching regulators

Pinout

- Pin count: 3 leads (Gate, Drain, Source) with the metal tab also tied to Drain (TO‑220 package).
- Function: N‑channel enhancement‑mode power MOSFET used as a high‑current switching device in power supplies, motor drivers, etc. Pinout (front view, left to right): Gate, Drain, Source; tab = Drain.

Manufacturer

Manufacturer: International Rectifier (IR). It is a semiconductor company specializing in power management devices (power MOSFETs, diodes, IGBTs, etc.). IR is now part of Infineon Technologies (German semiconductor company).

Package

TO-220AB (TO-220) package.

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