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IRF5801TRPBF
+БОМMOSFET N-CH 200V 600MA MICRO6
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF5801TRPBF
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В наличии6311
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | HEXFET® |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 600mA (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 2.2Ohm @ 360mA, 10V |
| Vgs(th)(Max)@Id | 5.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 3.9 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 88 pF @ 25 V |
| PowerDissipation(Max) | 2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro6™(TSOP-6) |
| Package/Case | SOT-23-6 Thin, TSOT-23-6 |
| BaseProductNumber | IRF5801 |
Обзор
Description
The IRF5801TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 100V, a continuous drain current (I_D) rating of 42A at a temperature of 25°C, and a low on-resistance (R_DS(on)) of around 0.045 ohms, making it efficient for power management and conversion tasks.
This device is ideal for power supplies, motor control circuits, and DC-DC converters due to its fast switching speeds and thermal stability. It comes in a TO-220 package, facilitating heat dissipation and easier mounting on PCBs.
The IRF5801TRPBF is also RoHS compliant, ensuring it meets environmental standards for hazardous substances. Its robust performance and reliable characteristics make it a popular choice among engineers and designers in various electronic applications. Always refer to the datasheet for detailed specifications and application guidelines.
This device is ideal for power supplies, motor control circuits, and DC-DC converters due to its fast switching speeds and thermal stability. It comes in a TO-220 package, facilitating heat dissipation and easier mounting on PCBs.
The IRF5801TRPBF is also RoHS compliant, ensuring it meets environmental standards for hazardous substances. Its robust performance and reliable characteristics make it a popular choice among engineers and designers in various electronic applications. Always refer to the datasheet for detailed specifications and application guidelines.
Equivalent
The IRF5801TRPBF is an N-channel MOSFET, and equivalent products include the BSC090N15, STP16NF06, and FQP30N06L. These alternatives may have slight differences in specifications such as voltage, current ratings, and RDS(on). Always verify datasheets to ensure compatibility for your specific application.
Features
The IRF5801TRPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
- Voltage Rating: V_DS max of 50V, providing robust performance in various applications.
- Current Handling: Continuous drain current (I_D) of up to 80A, suitable for high-power circuits.
- R_DS(on): Low on-resistance (typically 0.022 ohms at V_GS = 10V), reducing power loss and improving efficiency.
- Gate Threshold Voltage: V_GS(th) typically between 2V and 4V, enabling efficient control at lower gate voltages.
- Fast Switching Speed: High-speed switching capabilities minimize transition losses, beneficial for PWM and DC-DC converters.
- Package Type: Available in TO-220 package for easy mounting and heat dissipation.
- Thermal Resistance: Low thermal resistance, allowing for better heat management in demanding applications.
Applications include power supplies, motor drivers, and other high-efficiency systems.
- Voltage Rating: V_DS max of 50V, providing robust performance in various applications.
- Current Handling: Continuous drain current (I_D) of up to 80A, suitable for high-power circuits.
- R_DS(on): Low on-resistance (typically 0.022 ohms at V_GS = 10V), reducing power loss and improving efficiency.
- Gate Threshold Voltage: V_GS(th) typically between 2V and 4V, enabling efficient control at lower gate voltages.
- Fast Switching Speed: High-speed switching capabilities minimize transition losses, beneficial for PWM and DC-DC converters.
- Package Type: Available in TO-220 package for easy mounting and heat dissipation.
- Thermal Resistance: Low thermal resistance, allowing for better heat management in demanding applications.
Applications include power supplies, motor drivers, and other high-efficiency systems.
Pinout
The IRF5801TRPBF is a N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the device can be turned on (conducting state) or off (non-conducting state).
2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is the input terminal connected to the ground or negative side of the power supply. Current flows into the source when the MOSFET is turned on.
4. Body (B): This pin is internally connected to the source and is typically not used in standard applications.
The IRF5801TRPBF is designed for high-speed switching and is commonly used in power management applications.
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the device can be turned on (conducting state) or off (non-conducting state).
2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is the input terminal connected to the ground or negative side of the power supply. Current flows into the source when the MOSFET is turned on.
4. Body (B): This pin is internally connected to the source and is typically not used in standard applications.
The IRF5801TRPBF is designed for high-speed switching and is commonly used in power management applications.
Manufacturer
The IRF5801TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in the development and production of a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. Infineon is known for its focus on innovative technologies that promote energy efficiency and sustainability, particularly in sectors such as automotive electronics, IoT, and renewable energy. The company plays a significant role in advancing technologies such as electric vehicles, smart grids, and secure connectivity. Infineon operates worldwide and serves a diverse customer base, from large corporations to smaller enterprises.
Application
The IRF5801TRPBF is a N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. Switching Power Supplies: Used in converters and inverters for efficient energy transfer.
2. Motor Control: Ideal for driving DC motors in robotics and industrial automation.
3. Power Amplifiers: Utilized in RF amplifiers and audio applications for signal amplification.
4. LED Drivers: Employed in controlling LED lighting systems.
5. Battery Management: Used in circuits for charging and discharging batteries efficiently.
Its high efficiency and fast switching capabilities make it suitable for these applications.
1. Switching Power Supplies: Used in converters and inverters for efficient energy transfer.
2. Motor Control: Ideal for driving DC motors in robotics and industrial automation.
3. Power Amplifiers: Utilized in RF amplifiers and audio applications for signal amplification.
4. LED Drivers: Employed in controlling LED lighting systems.
5. Battery Management: Used in circuits for charging and discharging batteries efficiently.
Its high efficiency and fast switching capabilities make it suitable for these applications.
Package
The IRF5801TRPBF is typically packaged in a TO-220 form factor. This package type provides effective heat dissipation and is commonly used for power MOSFETs in various applications.
