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IRF630PBF
+БОМMOSFET N-CH 200V 9A TO220AB
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ПроизводительVishay Силиконикс
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Мфр. Часть #IRF630PBF
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Лист данных IRF630PBF DataSheet
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В наличии9333
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Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
| Power Dissipation (Max) | 74W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRF630 |
Обзор
Description
The IRF630PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a maximum drain-source voltage (Vds) of 500V, making it suitable for high-voltage applications in power electronics. Its low on-resistance (Rds(on)) allows for efficient conduction, reducing power losses.
Key specifications include a maximum continuous drain current (Id) of 9A at a temperature of 25°C and a gate threshold voltage (Vgs(th)) typically ranging from 2V to 4V. The IRF630PBF also has a fast switching speed, which enhances its performance in pulse width modulation (PWM) applications.
It is commonly used in power supplies, motor controls, and other applications requiring efficient power management. The "PBF" designation indicates that it is lead-free and compliant with RoHS (Restriction of Hazardous Substances) standards, making it environmentally friendly. Overall, the IRF630PBF is a versatile component, ideal for both hobbyist and industrial applications in electronics.
Key specifications include a maximum continuous drain current (Id) of 9A at a temperature of 25°C and a gate threshold voltage (Vgs(th)) typically ranging from 2V to 4V. The IRF630PBF also has a fast switching speed, which enhances its performance in pulse width modulation (PWM) applications.
It is commonly used in power supplies, motor controls, and other applications requiring efficient power management. The "PBF" designation indicates that it is lead-free and compliant with RoHS (Restriction of Hazardous Substances) standards, making it environmentally friendly. Overall, the IRF630PBF is a versatile component, ideal for both hobbyist and industrial applications in electronics.
Equivalent
The IRF630PBF is an N-channel MOSFET. Equivalent products include:
1. IRF630
2. IRF640 (higher voltage)
3. STP16NF06 (lower voltage, similar specs)
4. FQP30N06L (lower gate threshold voltage)
5. MTP50N06 (higher current rating)
Always check specific datasheets for precise electrical characteristics and suitability for your application.
1. IRF630
2. IRF640 (higher voltage)
3. STP16NF06 (lower voltage, similar specs)
4. FQP30N06L (lower gate threshold voltage)
5. MTP50N06 (higher current rating)
Always check specific datasheets for precise electrical characteristics and suitability for your application.
Features
The IRF630PBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: Continuous drain current (I_D) up to 9.2A at a junction temperature of 25°C.
3. R_DS(on): Low on-resistance of approximately 0.4 ohms, ensuring efficient operation and minimal power loss.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, allowing for easy drive with standard logic levels.
5. Package Type: Available in TO-220 and other package options for versatile mounting and thermal management.
6. Fast Switching: Suitable for high-frequency applications due to its low input capacitance.
7. Temperature Range: Operating junction temperature up to 150°C, which provides reliability in various applications.
The IRF630PBF is commonly used in power supplies, motor control, and automotive applications due to its robust performance characteristics.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: Continuous drain current (I_D) up to 9.2A at a junction temperature of 25°C.
3. R_DS(on): Low on-resistance of approximately 0.4 ohms, ensuring efficient operation and minimal power loss.
4. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, allowing for easy drive with standard logic levels.
5. Package Type: Available in TO-220 and other package options for versatile mounting and thermal management.
6. Fast Switching: Suitable for high-frequency applications due to its low input capacitance.
7. Temperature Range: Operating junction temperature up to 150°C, which provides reliability in various applications.
The IRF630PBF is commonly used in power supplies, motor control, and automotive applications due to its robust performance characteristics.
Pinout
The IRF630PBF is an N-channel MOSFET with a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the main current flows into the MOSFET. The drain connects to the load in a circuit.
3. Source (S): This terminal is where current exits the MOSFET. It's connected to the ground or the negative side of the power supply in a circuit.
The IRF630PBF is commonly used in switching applications and can handle high voltages and currents, making it suitable for various power electronics applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the main current flows into the MOSFET. The drain connects to the load in a circuit.
3. Source (S): This terminal is where current exits the MOSFET. It's connected to the ground or the negative side of the power supply in a circuit.
The IRF630PBF is commonly used in switching applications and can handle high voltages and currents, making it suitable for various power electronics applications.
Manufacturer
The IRF630PBF is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon is a global leader in semiconductor solutions, focusing on automotive, industrial, and multi-market segments. The company specializes in power semiconductors, which are essential for efficient energy management and conversion. Infineon is known for innovation in areas such as power electronics, security technologies, and sensor solutions, catering to a wide range of applications including automotive systems, industrial automation, and consumer electronics. The IRF630PBF itself is a power MOSFET designed for high-voltage applications, offering features like low on-resistance and high-speed switching, making it suitable for various power management systems.
Application
The IRF630PBF is an N-channel power MOSFET commonly used in various applications, including:
1. Switching Power Supplies: Efficiently switch high currents with low on-resistance.
2. Motor Control: Drive DC motors in robotics and industrial applications.
3. DC-DC Converters: Utilize in buck or boost converter circuits.
4. Audio Amplifiers: Serve as output transistors in high-power audio applications.
5. Switching Regulators: Enhance efficiency in voltage regulation tasks.
6. Load Switching: Control high-power loads in consumer electronics.
Its robust design and high voltage rating make it suitable for these diverse applications.
1. Switching Power Supplies: Efficiently switch high currents with low on-resistance.
2. Motor Control: Drive DC motors in robotics and industrial applications.
3. DC-DC Converters: Utilize in buck or boost converter circuits.
4. Audio Amplifiers: Serve as output transistors in high-power audio applications.
5. Switching Regulators: Enhance efficiency in voltage regulation tasks.
6. Load Switching: Control high-power loads in consumer electronics.
Its robust design and high voltage rating make it suitable for these diverse applications.
Package
The IRF630PBF is typically packaged in a TO-220 format, which is a three-lead power transistor package. This package type is designed for efficient heat dissipation and is commonly used in power switching applications.
