Спецификации
| Атрибут | Ценность |
| Supplier | Infineon Technologies |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | N and P-Channel |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 55V |
| Current-ContinuousDrain(Id)@25°C | 4.7A, 3.4A |
| RdsOn(Max)@IdVgs | 50mOhm @ 4.7A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 36nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 740pF @ 25V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
