IRF7380PBF

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IRF7380PBF

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MOSFET 2N-CH 80V 3.6A 8-SOIC

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Спецификации

Атрибут Ценность
Supplier Infineon Technologies,Rochester Electronics, LLC
Package Tube,Tube
Series HEXFET®
ProductStatus Discontinued at Digi-Key
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 80V
Current-ContinuousDrain(Id)@25°C 3.6A
RdsOn(Max)@IdVgs 73mOhm @ 2.2A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 23nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 660pF @ 25V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Обзор

Description

The IRF7380PBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency electronic switching applications. It is part of the HEXFET® family, known for its low on-resistance and fast switching capabilities. This particular MOSFET is an N-channel device, which means it conducts current when a positive voltage is applied to the gate relative to the source.
Key specifications include:
1. Voltage and Current Ratings: It typically handles a maximum drain-source voltage (V_DS) and current (I_D) as specified in the datasheet, making it suitable for medium to high-power applications.

2. Low On-Resistance: Ensures minimal power loss during conduction, enhancing efficiency.

3. Fast Switching: Reduces time delays in switching, which is crucial for high-frequency applications.

4. Thermal Performance: Good thermal performance due to its design, allowing it to operate efficiently under various thermal conditions.
The IRF7380PBF is commonly used in power supply circuits, motor controllers, and other applications where efficient power management is critical. Its robust design and performance make it a preferred choice for engineers in various electronic design projects.

Equivalent

The IRF7380PBF is a power MOSFET. Equivalent products can include the STP55NF06 from STMicroelectronics, FQP65N06 from ON Semiconductor, and the FDP6030BL from Fairchild Semiconductor. These alternatives should be checked for compatibility in terms of voltage, current ratings, and package type to ensure they meet the same specifications as the IRF7380PBF. Always verify the datasheets of these equivalents to ensure they meet the specific requirements of your application.

Features

The IRF7380PBF is a power MOSFET designed for efficient power management applications. Key features of this component include:
1. N-Channel MOSFET: It is an N-channel device, which is commonly used for switching purposes in various electronic circuits.
2. Low On-Resistance: The MOSFET offers low on-state resistance, enhancing efficiency and reducing power loss during operation.
3. High Current Capability: It supports high current flow, making it suitable for applications requiring substantial power handling.
4. Fast Switching Speed: The IRF7380PBF is designed for fast switching, which helps improve overall performance in high-frequency applications.
5. Rugged Design: The device is built to withstand high-stress conditions, ensuring reliability and robustness in various environments.
6. Thermal Performance: It provides good thermal performance, which is crucial for maintaining stability and efficiency under heavy load conditions.
7. Lead-Free: The "PBF" suffix indicates it is a lead-free component, complying with environmental standards.
These features make the IRF7380PBF suitable for applications in power management, automotive, industrial, and consumer electronics.

Pinout

The IRF7380PBF is a power MOSFET that typically comes in an SO-8 package. This package has 8 pins, but the effective pin count for its operation can often be considered as six due to internal connections being shared among the pins. The primary function of this MOSFET is to act as a switch or amplifier in electronic circuits, specifically for low voltage applications.
The pin configuration for the IRF7380PBF generally includes:
1. Pins 1, 2, 3: Source (S) - These pins are connected together internally and serve as the source terminal of the MOSFET.
2. Pin 4: Gate (G) - This pin is used to control the MOSFET; applying a voltage here turns the device on or off.
3. Pins 5, 6, 7, 8: Drain (D) - These pins are also internally connected and serve as the drain terminal through which current flows when the MOSFET is on.
This MOSFET is used in various applications such as load switching, motor drives, and DC-DC converters due to its efficiency and reliability.

Manufacturer

The IRF7380PBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that was founded in 1999 as a spin-off from Siemens AG. The company is known for producing a wide variety of semiconductor solutions, including microcontrollers, power semiconductors, and sensors. Infineon operates in several markets, including automotive, industrial, communications, and security. It is recognized as a leader in the global semiconductor industry, focusing on energy efficiency, mobility, and security solutions.

Application

The IRF7380PBF is a power MOSFET commonly used in various applications due to its high efficiency and low on-resistance. Key application areas include:
1. Power Management: Used in DC-DC converters and voltage regulators.
2. Motor Control: Effective in driving motors in industrial and consumer electronics.
3. Switching Applications: Suitable for high-speed switching in power supplies and inverters.
4. Automotive Systems: Utilized in electronic control units for efficient power handling.
5. Telecommunications: Employed in amplifiers and RF applications for better power efficiency.
6. Renewable Energy Systems: Used in solar inverters and other energy conversion devices.
These applications benefit from its ability to handle high currents and voltages efficiently.

Package

The IRF7380PBF is typically available in a D2PAK (also known as TO-263) package type. This surface-mount package is designed for high-power applications, offering good thermal performance and is often used in automotive and industrial sectors.

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