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IRF7413ZTRPBF
+БОМMOSFET N-CH 30V 13A 8SO
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF7413ZTRPBF
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Лист данных IRF7413ZTRPBF DataSheet
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Пакет SOIC-8
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В наличии2446
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 13A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 10mOhm @ 13A, 10V |
| Vgs(th)(Max)@Id | 2.25V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 14 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1210 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Обзор
Description
Key features of the IRF7413ZTRPBF include:
1. N-Channel MOSFET: It uses an N-channel for conduction, which is typically more efficient for high-speed switching applications.
2. Low On-resistance: This MOSFET has a low drain-to-source on-resistance (R_DS(on)), minimizing power loss and improving efficiency.
3. Fast Switching Speed: This component is designed to switch quickly, reducing energy loss during the transition period.
4. Enhancement Mode: The MOSFET is in the off state when the gate-source voltage is zero, turning on with a positive gate voltage.
5. RoHS Compliant: The device meets environmental standards, being free of hazardous substances.
It is commonly used in electronic applications that demand reliable performance, such as in computing, telecommunications, and industrial systems.
Equivalent
Features
1. Voltage and Current Ratings: It typically operates with a maximum drain-source voltage (V_ds) of 30V and a continuous drain current (I_d) of up to 20A, making it suitable for low to medium voltage applications.
2. Low On-Resistance: The MOSFET features very low on-resistance (R_ds(on)), which reduces conduction losses and improves efficiency in switching applications.
3. Fast Switching: It has fast switching capabilities, which are beneficial for high-frequency applications, minimizing transition losses.
4. Package: The IRF7413ZTRPBF is available in a compact surface-mount SO-8 package, aiding in space-efficient PCB designs.
5. RoHS Compliant: It is environmentally friendly, adhering to RoHS standards by being lead-free.
6. Applications: Commonly used in DC-DC converters, load switching, and power management in consumer electronics and industrial systems.
These features make the IRF7413ZTRPBF a versatile component in various electronic applications where efficiency and space saving are critical.
Pinout
1. Pins 1, 2, 3 (Source): These pins are internally connected and serve as the source of the MOSFET.
2. Pin 4 (Gate): This pin is used to control the MOSFET. Applying a voltage here turns the MOSFET on or off.
3. Pins 5, 6, 7, 8 (Drain): These pins are internally connected and serve as the drain of the MOSFET.
The IRF7413ZTRPBF is an N-channel MOSFET known for low on-resistance and robust performance, making it suitable for applications such as DC-DC converters, load switching, and other power management tasks.
Manufacturer
Application
1. DC-DC Converters: Used in power management systems for efficient voltage regulation.
2. Motor Control: Suitable for driving motors in industrial or consumer applications.
3. Battery Management: Effective in battery protection and management systems.
4. Load Switching: Utilized in switching circuits for controlling power to loads.
5. Telecommunications: Employed in power amplifiers and other telecom equipment.
6. Consumer Electronics: Found in power supply units for devices like laptops and TVs.
These applications benefit from the MOSFET's reliability and performance in handling high currents and voltages.