Спецификации
| Атрибут | Ценность |
| Supplier | Infineon Technologies |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 4.7A |
| RdsOn(Max)@IdVgs | 30mOhm @ 4.7A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 39nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 1700pF @ 15V |
| Power-Max | 1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-TSSOP (0.173, 4.40mm Width) |
