Спецификации
| Атрибут | Ценность |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 4.5A |
| Rds On(Max) @ Id Vgs | 35mOhm @ 4.5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 44nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1464pF @ 25V |
| Power - Max | 1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
