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IRF7821PBF
+БОМMOSFET N-CH 30V 13.6A 8SO
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF7821PBF
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В наличии5541
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 13.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Обзор
Description
The IRF7821PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of around 60A, making it suitable for power management in various electronic circuits. Its low on-resistance (R_DS(on)) enhances efficiency by reducing power loss during operation. The device is often used in applications such as DC-DC converters, motor control, and power supply circuits.
The IRF7821PBF is packaged in a TO-220 form factor, allowing for effective heat dissipation and easy integration into systems. It is also notable for its fast switching speed, which helps in minimizing switching losses. The “PBF” suffix indicates that it is lead-free, complying with RoHS (Restriction of Hazardous Substances) standards, making it an environmentally friendly choice for modern electronic designs. Overall, the IRF7821PBF is a reliable option for engineers looking to enhance the performance of their power electronics.
The IRF7821PBF is packaged in a TO-220 form factor, allowing for effective heat dissipation and easy integration into systems. It is also notable for its fast switching speed, which helps in minimizing switching losses. The “PBF” suffix indicates that it is lead-free, complying with RoHS (Restriction of Hazardous Substances) standards, making it an environmentally friendly choice for modern electronic designs. Overall, the IRF7821PBF is a reliable option for engineers looking to enhance the performance of their power electronics.
Equivalent
The IRF7821PBF is a N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and SI7469DP. Always check datasheets for specific electrical characteristics, voltage ratings, and package compatibility to ensure they meet your application requirements.
Features
The IRF7821PBF is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
- Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 30V.
- Current Rating: The continuous drain current (I_D) is rated at 61A, suitable for high-power applications.
- R_DS(on): Low on-resistance of approximately 8.2 mΩ at V_GS = 10V, ensuring minimal conduction losses.
- Gate Threshold Voltage: V_GS(th) is between 1V to 3V, allowing for easy integration with low-voltage control circuits.
- Package Type: Available in a TO-220 package for effective heat dissipation and ease of mounting.
- Fast Switching: Supports high-speed switching applications, making it ideal for power supplies, inverters, and motor drives.
- RoHS Compliant: Environmentally friendly construction without hazardous materials.
These features make the IRF7821PBF suitable for a wide range of electronic applications requiring efficient power switching.
- Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 30V.
- Current Rating: The continuous drain current (I_D) is rated at 61A, suitable for high-power applications.
- R_DS(on): Low on-resistance of approximately 8.2 mΩ at V_GS = 10V, ensuring minimal conduction losses.
- Gate Threshold Voltage: V_GS(th) is between 1V to 3V, allowing for easy integration with low-voltage control circuits.
- Package Type: Available in a TO-220 package for effective heat dissipation and ease of mounting.
- Fast Switching: Supports high-speed switching applications, making it ideal for power supplies, inverters, and motor drives.
- RoHS Compliant: Environmentally friendly construction without hazardous materials.
These features make the IRF7821PBF suitable for a wide range of electronic applications requiring efficient power switching.
Pinout
The IRF7821PBF is a N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in power management applications. The pin configuration is as follows:
1. Gate - Controls the MOSFET operation.
2. Drain - The output terminal where current flows out.
3. Source - The input terminal where current flows in.
The remaining pins typically include various connections for thermal and reliability considerations, including a heatsink connection or additional gate protection features.
This MOSFET is designed for high-efficiency applications, such as power supplies and motor drivers, capable of handling high currents and voltages. Always refer to the specific datasheet for exact pin assignments and electrical characteristics.
1. Gate - Controls the MOSFET operation.
2. Drain - The output terminal where current flows out.
3. Source - The input terminal where current flows in.
The remaining pins typically include various connections for thermal and reliability considerations, including a heatsink connection or additional gate protection features.
This MOSFET is designed for high-efficiency applications, such as power supplies and motor drivers, capable of handling high currents and voltages. Always refer to the specific datasheet for exact pin assignments and electrical characteristics.
Manufacturer
The IRF7821PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in power semiconductors, microcontrollers, sensors, and automotive electronics. They serve various industries including automotive, industrial, and consumer electronics, focusing on energy efficiency and innovation in electronic components. Infineon is known for its commitment to sustainability and technology advancement, making it a key player in the semiconductor market.
Application
The IRF7821PBF is a N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Motor Control: Driving electric motors in industrial and automotive applications.
3. Switching Power Supplies: Enhancing efficiency in power conversion.
4. Load Switching: Used in various load management scenarios.
5. Power Amplifiers: In RF applications for signal amplification.
6. Battery Management Systems: In electric vehicles and renewable energy systems.
Its high efficiency and low R_DS(on) make it suitable for high-frequency applications.
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Motor Control: Driving electric motors in industrial and automotive applications.
3. Switching Power Supplies: Enhancing efficiency in power conversion.
4. Load Switching: Used in various load management scenarios.
5. Power Amplifiers: In RF applications for signal amplification.
6. Battery Management Systems: In electric vehicles and renewable energy systems.
Its high efficiency and low R_DS(on) make it suitable for high-frequency applications.
Package
The IRF7821PBF is packaged in a TO-220 type package, which is designed for high-power applications. This package provides good thermal performance and is suitable for heat dissipation in power electronics.
