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IRF7907TRPBF
+БОМMOSFET 2N-CH 30V 9.1A/11A 8SO
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF7907TRPBF
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Лист данных IRF7907TRPBF DataSheet
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Пакет SOIC-8
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В наличии1290
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 9.1A, 11A |
| Rds On(Max) @ Id Vgs | 16.4mOhm @ 9.1A, 10V |
| Vgs(th)(Max) @ Id | 2.35V @ 25µA |
| Gate Charge(Qg)(Max) @ Vgs | 10nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 850pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Обзор
Description
Key features of the IRF7907TRPBF include a low on-resistance, which minimizes power loss and increases efficiency, and a high-speed switching capability, making it suitable for applications requiring fast response times. It is designed to handle high currents and voltages, typically used in environments like DC-DC converters, motor drives, and other power supply systems.
The transistor is encapsulated in a standard TO-252 (DPAK) package, facilitating ease of mounting and efficient heat dissipation. It offers reliable performance under various operating conditions, thanks to its rugged construction and capability to endure high temperatures and voltages.
Overall, the IRF7907TRPBF is favored in power electronics for its efficiency, reliability, and performance in demanding applications.
Equivalent
1. STMicroelectronics STP75NF75: Offers similar voltage and current ratings.
2. ON Semiconductor FDP8880: Compatible in many power switching applications.
3. Vishay SiHP75N10E: Another alternative with comparable specifications.
Always check the datasheets to ensure compatibility with your specific application needs, as parameters like gate charge and package type may vary.
Features
1. Voltage and Current Ratings: It typically features a high drain-to-source voltage rating and supports a significant current load, enhancing its suitability for high-power applications.
2. Low On-Resistance: The device offers low on-state resistance, which minimizes power loss and improves efficiency in power management applications.
3. Packaging: The IRF7907TRPBF is often available in Surface-Mount Device (SMD) packaging, facilitating easy integration onto circuit boards in compact spaces.
4. Temperature Performance: It is designed to operate efficiently across a wide temperature range, ensuring reliability in various environmental conditions.
5. Applications: Common uses include DC-DC converters, motor drives, and other power management systems where efficient switching is critical.
These features make the IRF7907TRPBF a versatile component in the design of energy-efficient electronic circuits.
Pinout
The typical pin configuration in a SO-8 package for a MOSFET includes:
1. Drain (D): Connected to the load.
2. Gate (G): Controls the MOSFET's switching behavior.
3. Source (S): Connected to ground or the negative side of the power supply.
4. Substrate/Body (typically internally connected to the Source in most MOSFETs).
Usually, multiple pins might be internally connected to the same terminal to handle higher currents and improve thermal performance. For precise pin assignments and internal connections, referring to the specific datasheet of the IRF7907TRPBF is essential.