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IRFB3006PBF
+БОМMOSFET N-CH 60V 195A TO220AB
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRFB3006PBF
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В наличии7787
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | HEXFET® |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 195A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 2.5mOhm @ 170A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 300 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 8970 pF @ 50 V |
| PowerDissipation(Max) | 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
| Package/Case | TO-220-3 |
| BaseProductNumber | IRFB3006 |
Обзор
Description
IRFB3006PBF is a high-performance N-channel MOSFET designed for various power management applications. It features a low on-resistance (R_DS(on)) and high current handling capability, making it suitable for switching and amplification purposes in power supplies, motor drivers, and other electronic circuits. The device typically has a voltage rating of 30V and can handle continuous currents up to 100A, depending on the thermal conditions.
The MOSFET's construction allows for efficient heat dissipation, which is crucial for maintaining performance in high-load scenarios. Its fast switching speeds enable improved efficiency and reduced power loss in applications like DC-DC converters and inverters. Additionally, the IRFB3006PBF comes in a TO-220 package, which facilitates easy mounting and heat sinking.
Overall, this component is favored for designs requiring robust performance in compact spaces, ensuring reliability and efficiency in modern electronic devices.
The MOSFET's construction allows for efficient heat dissipation, which is crucial for maintaining performance in high-load scenarios. Its fast switching speeds enable improved efficiency and reduced power loss in applications like DC-DC converters and inverters. Additionally, the IRFB3006PBF comes in a TO-220 package, which facilitates easy mounting and heat sinking.
Overall, this component is favored for designs requiring robust performance in compact spaces, ensuring reliability and efficiency in modern electronic devices.
Equivalent
The IRFB3006PBF is an N-channel MOSFET with similar characteristics to several other chips. Equivalents include the STP75NF75, FQP30N60, and AOT-360. When looking for alternatives, consider parameters such as voltage, current ratings, R_DS(on), and thermal performance to ensure compatibility for your application. Always check the specific datasheets for detailed specifications.
Features
The IRFB3006PBF is an N-channel MOSFET from Infineon Technologies designed for high-efficiency applications. Key features include:
- Voltage Rating: 60V maximum drain-source voltage, allowing it to handle significant voltage levels.
- Current Rating: Continuous drain current of 90A, suitable for high-power applications.
- RDS(on): Low on-resistance of 3.6 mΩ at VGS of 10V, minimizing conduction losses.
- Gate Threshold Voltage: VGS(th) between 2V to 4V, facilitating easy drive with standard logic levels.
- Fast Switching Speed: Capable of high-speed switching, making it suitable for PWM applications.
- Thermal Resistance: Low thermal resistance enhances efficiency and thermal management.
- Package Type: Available in a TO-220 package, providing easy mounting and heat dissipation.
These features make the IRFB3006PBF suitable for applications such as power converters, motor drives, and power management systems.
- Voltage Rating: 60V maximum drain-source voltage, allowing it to handle significant voltage levels.
- Current Rating: Continuous drain current of 90A, suitable for high-power applications.
- RDS(on): Low on-resistance of 3.6 mΩ at VGS of 10V, minimizing conduction losses.
- Gate Threshold Voltage: VGS(th) between 2V to 4V, facilitating easy drive with standard logic levels.
- Fast Switching Speed: Capable of high-speed switching, making it suitable for PWM applications.
- Thermal Resistance: Low thermal resistance enhances efficiency and thermal management.
- Package Type: Available in a TO-220 package, providing easy mounting and heat dissipation.
These features make the IRFB3006PBF suitable for applications such as power converters, motor drives, and power management systems.
Pinout
The IRFB3006PBF is a N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin is the output terminal where current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is the input terminal where current flows into the MOSFET, completing the circuit.
This device is commonly used in power applications due to its high current and voltage handling capabilities. The IRFB3006PBF has a maximum drain-source voltage (V_DS) of 60V and can handle continuous drain current (I_D) up to 120A, making it suitable for various switching applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin is the output terminal where current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is the input terminal where current flows into the MOSFET, completing the circuit.
This device is commonly used in power applications due to its high current and voltage handling capabilities. The IRFB3006PBF has a maximum drain-source voltage (V_DS) of 60V and can handle continuous drain current (I_D) up to 120A, making it suitable for various switching applications.
Manufacturer
The IRFB3006PBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial power control, and security technology. The company is known for its expertise in power management, microcontrollers, and sensors, and it plays a significant role in the development of technologies related to energy efficiency and renewable energy. Infineon aims to enable a connected and sustainable world through innovative semiconductor solutions.
Application
The IRFB3006PBF is an N-channel MOSFET primarily used in power applications due to its high efficiency and fast switching capabilities. Common application areas include:
1. DC-DC Converters: For efficient power conversion in devices like computers and servers.
2. Power Supplies: In switch-mode power supplies (SMPS) for consumer electronics.
3. Motor Control: In industrial and automotive applications for driving motors.
4. Solar Inverters: To optimize energy conversion in solar power systems.
5. Battery Management Systems: For efficient power handling in rechargeable batteries.
Its low on-resistance enhances performance in these areas, making it a popular choice for engineers.
1. DC-DC Converters: For efficient power conversion in devices like computers and servers.
2. Power Supplies: In switch-mode power supplies (SMPS) for consumer electronics.
3. Motor Control: In industrial and automotive applications for driving motors.
4. Solar Inverters: To optimize energy conversion in solar power systems.
5. Battery Management Systems: For efficient power handling in rechargeable batteries.
Its low on-resistance enhances performance in these areas, making it a popular choice for engineers.
Package
The IRFB3006PBF is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is commonly used for power applications in electronic circuits.
