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IRFI4410ZPBF
+БОМMOSFET N-CH 100V 43A TO220AB FP
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRFI4410ZPBF
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Лист данных IRFI4410ZPBF DataSheet
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В наличии25002
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Спецификации
| Атрибут | Ценность |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 43A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 9.3mOhm @ 26A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 150µA |
| Gate Charge(Qg)(Max) @ Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 4910 pF @ 50 V |
| Power Dissipation (Max) | 47W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB Full-Pak |
Обзор
Description
The IRFI4410ZPBF is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high efficiency and reliability in electronic applications. Manufactured by Infineon Technologies, this N-channel MOSFET is part of the HEXFET® series, known for its ruggedness and performance.
Key specifications include a maximum drain-to-source voltage (V_ds) of 100V and a continuous drain current (I_d) of approximately 76A. With a low on-resistance of around 19 mΩ, it ensures minimal power loss during operation, making it suitable for high-power applications. The device is housed in a TO-220 package, offering effective heat dissipation and ease of mounting.
The IRFI4410ZPBF is commonly used in applications like motor drives, power supplies, and DC-DC converters, where efficient power handling is crucial. Its ability to handle significant power levels while maintaining stability makes it a popular choice in both industrial and consumer electronics. The "PBF" suffix indicates it is lead-free and RoHS compliant, aligning with environmental safety standards.
Key specifications include a maximum drain-to-source voltage (V_ds) of 100V and a continuous drain current (I_d) of approximately 76A. With a low on-resistance of around 19 mΩ, it ensures minimal power loss during operation, making it suitable for high-power applications. The device is housed in a TO-220 package, offering effective heat dissipation and ease of mounting.
The IRFI4410ZPBF is commonly used in applications like motor drives, power supplies, and DC-DC converters, where efficient power handling is crucial. Its ability to handle significant power levels while maintaining stability makes it a popular choice in both industrial and consumer electronics. The "PBF" suffix indicates it is lead-free and RoHS compliant, aligning with environmental safety standards.
Equivalent
The IRFI4410ZPBF is a N-channel MOSFET. Equivalent products include:
1. STP55NF06 - A similar N-channel MOSFET with comparable voltage and current ratings.
2. FQP50N06 - A Fairchild/Nexperia N-channel MOSFET with similar characteristics.
3. IPB50N06S4-08 - An Infineon N-channel MOSFET with similar specifications.
These equivalents can be used depending on specific parameter requirements like voltage, current, and Rds(on). Always verify datasheets to ensure compatibility.
1. STP55NF06 - A similar N-channel MOSFET with comparable voltage and current ratings.
2. FQP50N06 - A Fairchild/Nexperia N-channel MOSFET with similar characteristics.
3. IPB50N06S4-08 - An Infineon N-channel MOSFET with similar specifications.
These equivalents can be used depending on specific parameter requirements like voltage, current, and Rds(on). Always verify datasheets to ensure compatibility.
Features
The IRFI4410ZPBF is a N-channel MOSFET designed for various applications requiring efficient power handling and fast switching. Key features include:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 77A.
2. Low On-Resistance: The MOSFET has a low on-resistance (R_DS(on)) of approximately 13.5 mΩ, which helps reduce power losses and enhances efficiency.
3. Fast Switching: The device is designed for fast switching speeds, which is beneficial for high-frequency applications.
4. Thermal Performance: It features efficient thermal dissipation with its TO-220 package, aiding in reliable operation under high power conditions.
5. Ruggedness: The IRFI4410ZPBF is robust and offers a good avalanche and dV/dt ruggedness.
6. Lead-Free: It is lead-free and RoHS compliant, making it environmentally friendly.
These features make the IRFI4410ZPBF suitable for various applications in power management, motor control, and switch-mode power supplies.
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 77A.
2. Low On-Resistance: The MOSFET has a low on-resistance (R_DS(on)) of approximately 13.5 mΩ, which helps reduce power losses and enhances efficiency.
3. Fast Switching: The device is designed for fast switching speeds, which is beneficial for high-frequency applications.
4. Thermal Performance: It features efficient thermal dissipation with its TO-220 package, aiding in reliable operation under high power conditions.
5. Ruggedness: The IRFI4410ZPBF is robust and offers a good avalanche and dV/dt ruggedness.
6. Lead-Free: It is lead-free and RoHS compliant, making it environmentally friendly.
These features make the IRFI4410ZPBF suitable for various applications in power management, motor control, and switch-mode power supplies.
Pinout
The IRFI4410ZPBF is an N-channel MOSFET transistor. It comes in a TO-220AB package, which typically has three pins. The pin configuration for the IRFI4410ZPBF is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the conductivity between the drain and source.
2. Drain (D): This pin is the terminal through which the current enters the MOSFET when it is in the 'on' state.
3. Source (S): This pin is the terminal through which the current exits the MOSFET.
The IRFI4410ZPBF is designed for high speed, high current, and low on-resistance applications, making it suitable for power management and switching applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the conductivity between the drain and source.
2. Drain (D): This pin is the terminal through which the current enters the MOSFET when it is in the 'on' state.
3. Source (S): This pin is the terminal through which the current exits the MOSFET.
The IRFI4410ZPBF is designed for high speed, high current, and low on-resistance applications, making it suitable for power management and switching applications.
Manufacturer
The IRFI4410ZPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that develops and produces a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and more. It serves various industries such as automotive, industrial power control, power management, and digital security. Infineon is known for its innovation and technology-driven approach, focusing on energy efficiency, mobility, and security applications.
Application
The IRFI4410ZPBF is a power MOSFET commonly used in applications requiring high-speed switching and efficient power management. Typical areas include:
1. Power Supplies: Utilized in DC-DC converters and switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Applied in motor drives for industrial and automotive applications for precise control of motor speed and torque.
3. Audio Amplifiers: Used in high-power audio amplifiers for effective sound amplification with minimal distortion.
4. Renewable Energy: Employed in solar inverters and other renewable energy systems for efficient energy conversion.
5. Automotive Systems: Integrated into electric vehicle powertrains and battery management systems for reliable power delivery.
These applications benefit from the MOSFET's low on-resistance and high-current handling capabilities.
1. Power Supplies: Utilized in DC-DC converters and switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Applied in motor drives for industrial and automotive applications for precise control of motor speed and torque.
3. Audio Amplifiers: Used in high-power audio amplifiers for effective sound amplification with minimal distortion.
4. Renewable Energy: Employed in solar inverters and other renewable energy systems for efficient energy conversion.
5. Automotive Systems: Integrated into electric vehicle powertrains and battery management systems for reliable power delivery.
These applications benefit from the MOSFET's low on-resistance and high-current handling capabilities.
Package
The IRFI4410ZPBF is a Power MOSFET packaged in a TO-220 Full-Pak type. This package provides efficient heat dissipation with a fully insulated design, making it suitable for applications requiring high power handling and reliability.
