IRFR3710ZPBF

Изображения являются только для ссылки

IRFR3710ZPBF

+БОМ

MOSFET N-CH 100V 42A DPAK

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRFR3710ZPBF

  • Лист данных IRFR3710ZPBF DataSheet

  • Пакет TO-252-3

  • В наличии7685

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package Tube
Series HEXFET®
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 18mOhm @ 33A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 100 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2930 pF @ 25 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

Обзор

Description

The IRFR3710ZPBF is an N-channel MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 5.7A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max) @ 10V
- Fast Switching Speed
- Logic-Level Gate Drive (4V threshold)
- TO-252 (DPAK) Package
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its low gate charge and robust thermal performance enhance efficiency in compact designs.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the IRFR3710ZPBF (N-channel MOSFET, 100V, 5.3A, 0.065Ω) include:
- IRFR3720ZPBF (similar specs, higher current rating)
- IRFR3710Z (same specs, different packaging)
- IRFR1205ZPBF (lower voltage, similar current)
- STP80NF10 (100V, 80A, 0.015Ω)
- FQP10N20C (200V, 10A, 0.28Ω)
Check datasheets for exact compatibility.

Features

The IRFR3710ZPBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 42A (continuous)
- Low On-Resistance (RDS(on)): 23mΩ (max) @ VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Logic-Level Gate Drive: VGS(th) as low as 2V (min)
- Power Dissipation: 94W
- Package: TO-252 (DPAK), surface-mount
- Avalanche Energy Rated: Robust against inductive spikes
- Applications: Power supplies, motor control, DC-DC converters
This MOSFET is designed for efficiency in high-current, low-voltage applications.

Pinout

The IRFR3710ZPBF is a Power MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current-carrying terminal (connected to the load).
3. Source (S) – Ground/reference terminal.
Key Features:
- N-channel MOSFET
- VDS: 100V
- ID: 5.7A (continuous)
- RDS(on): 0.23Ω (max at VGS = 10V)
- Logic-level gate drive (fully enhanced at 4.5V)
Commonly used in switching circuits, power supplies, and motor control.

Package

The IRFR3710ZPBF is a Power MOSFET housed in a TO-252 (DPAK) surface-mount package. This package type is compact, suitable for high-power applications, and features a thermal pad for efficient heat dissipation. It's commonly used in switching power supplies, motor control, and other high-current circuits. The DPAK package balances size and performance, making it ideal for space-constrained designs.

Продукты, связанные с IRFR3710ZPBF

Сопоставительный анализ

  • Быстрая цитата

  • Отправьте запрос на котировку IRFR3710ZPBF Используя эту форму, мы ответим в течение 12 часов.