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IRFS4321TRLPBF
+БОМMOSFET N-CH 150V 85A D2PAK
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRFS4321TRLPBF
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Лист данных IRFS4321TRLPBF DataSheet
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В наличии7534
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Спецификации
| Атрибут | Ценность |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 4460 pF @ 25 V |
| Power Dissipation (Max) | 350W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | IRFS4321 |
Обзор
Description
Key features include:
- Voltage Rating: Typically supports higher voltage applications, ensuring reliability in various circuits.
- On-State Resistance (R_DS(on)): Low R_DS(on) minimizes power loss during operation, enhancing efficiency.
- Thermal Performance: Designed for effective heat dissipation, allowing for stable operation under load.
- Package Type: Often available in a compact package, facilitating easy integration into circuit designs.
Applications include consumer electronics, industrial systems, and automotive electronics, where energy efficiency and thermal management are crucial. Understanding the specifications and characteristics of IRFS4321TRLPBF is essential for engineers and designers aiming to optimize performance in power electronics.
Equivalent
Features
1. Voltage Rating: It has a drain-source voltage (Vds) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: The maximum continuous drain current (Id) is 50A, allowing it to handle significant loads.
3. Rds(on): It boasts a low on-resistance (Rds(on)) of approximately 11.5 mΩ at 10V gate-source voltage, contributing to reduced power losses and increased efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 1V to 2.5V, enabling it to be driven by low-voltage logic levels.
5. Package Type: It comes in a TO-220 package, facilitating effective heat dissipation and ease of mounting on heatsinks.
6. Fast Switching: The device features fast switching capabilities, suitable for applications in power management, motor control, and DC-DC converters.
Overall, the IRFS4321TRLPBF is ideal for applications requiring high performance and reliability.
Pinout
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): The terminal where the current flows out when the device is on.
3. Source (S): The terminal where the current enters when the device is on.
This MOSFET is designed for high-performance applications, featuring low on-resistance and fast switching capabilities, making it suitable for use in power management, motor control, and other electronic circuits.
Manufacturer
Application
1. DC-DC Converters: Used in step-down or buck converters for efficient power regulation.
2. Power Supply Circuits: Suitable for high-efficiency power supplies in consumer electronics.
3. Motor Control: Employed in driving DC motors and other inductive loads.
4. LED Drivers: Utilized in lighting applications for efficient current regulation.
5. Switching Regulators: Ideal for applications requiring rapid switching and minimal losses.
Its features make it suitable for energy-efficient designs in various electronic devices.