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IRS2153DPBF
+БОМIC GATE DRVR HALF-BRIDGE 8DIP
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRS2153DPBF
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Лист данных IRS2153DPBF DataSheet
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В наличии2039
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
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Спецификации
| Атрибут | Ценность |
| Part Status | Not For New Designs |
| Digi Key Programmable | Not Verified |
| Driven Configuration | Half-Bridge |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | MOSFET (N-Channel) |
| Voltage - Supply | 10V ~ 15.4V |
| Current - Peak Output (Source, Sink) | 180mA, 260mA |
| Input Type | RC Input Circuit |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Rise / Fall Time (Typ) | 120ns, 50ns |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Supplier Device Package | 8-PDIP |
| Base Product Number | IRS2153 |
Обзор
Description
1. Voltage Ratings: Capable of supporting a wide voltage range, making it suitable for different power applications.
2. Fast Switching: Designed for high-speed operation, reducing switching losses and improving efficiency.
3. Protection Features: Includes built-in protection mechanisms such as under-voltage lockout (UVLO) to enhance reliability.
4. Enhanced Performance: Offers lower propagation delay and adjustable rise and fall times, critical for optimizing switching characteristics.
5. Thermal Management: Designed to operate effectively at elevated temperatures, enhancing performance in demanding environments.
Overall, the IRS2153DPBF is an ideal choice for applications requiring robust and efficient switching solutions in power electronics.
Equivalent
Features
1. Dual Output: Capable of driving two independent outputs, facilitating half-bridge and full-bridge configurations.
2. High Voltage Operation: Supports high-voltage applications with a maximum voltage rating of 600V.
3. High Speed: Offers fast switching speeds, enhancing efficiency and reducing power loss.
4. Built-in Bootstrap Circuit: Allows for the driving of high-side MOSFETs without the need for an external supply voltage.
5. Integrated Protection: Includes features like undervoltage lockout (UVLO) to protect against low supply voltages.
6. Thermal Shutdown: Provides inherent thermal protection to prevent overheating.
7. Wide Supply Voltage Range: Operates from a wide range of supply voltages, enhancing versatility in design.
These features make the IRS2153DPBF suitable for various high-performance applications in power electronics.
Pinout
Pin Count and Function:
1. VCC: Supply voltage for the driver.
2. VB: High-side bootstrap supply voltage.
3. VS: High-side switch source connection.
4. HO: High-side output to drive the high-side MOSFET/IGBT.
5. LO: Low-side output to drive the low-side MOSFET/IGBT.
6. COM: Common ground reference for the driver.
7. SD: Shutdown pin to disable the driver.
8. CS: Current sense for overcurrent protection.
This IC is designed to provide robust gate drive capability in a compact package, making it suitable for various power electronics applications.
Manufacturer
Application
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Inverters: Employed in renewable energy systems, like solar inverters and motor drives.
3. Lighting: Suitable for LED drivers and fluorescent lighting ballasts.
4. Industrial Automation: Used in motor control applications and automation systems.
5. Home Appliances: Implemented in energy-efficient appliances for improved control.
Its versatility and efficiency make it suitable for various power management solutions.