IS41LV16100B-50TL

Изображения являются только для ссылки

IS41LV16100B-50TL

+БОМ

IC DRAM 16MBIT PAR 44TSOP II

  • ПроизводительISSI, Интегрированное кремниевое решение Inc.

  • Мфр. Часть #IS41LV16100B-50TL

  • Лист данных IS41LV16100B-50TL DataSheet

  • В наличии3379

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Part Status Obsolete
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology DRAM - EDO
Memory Size 16Mbit
Memory Organization 1M x 16
Memory Interface Parallel
Access Time 25 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
Base Product Number IS41LV16100

Обзор

Description

The IS41LV16100B-50TL is a 16 Mb (2M x 8) synchronous dynamic random-access memory (SDRAM) produced by ISSI (Integrated Silicon Solution, Inc.). It operates at a clock frequency of up to 100 MHz, facilitating high-speed data access and processing. This memory chip is designed for low-voltage applications, with an operating voltage of 2.5V, making it suitable for battery-powered devices.
Features include a deep 8-word burst mode, which enhances performance in applications requiring sequential data access, and a fast page mode for reduced access latency. The package dimensions are compact, often offered in a 54-pin TSOP-II format, ideal for space-constrained designs.
This SDRAM is commonly utilized in various applications such as telecommunications, consumer electronics, and industrial systems, where efficient memory performance is crucial. Its combination of speed, density, and low power consumption makes it an attractive choice for modern embedded systems and computing applications.

Equivalent

The IS41LV16100B-50TL is a 16Mb DRAM chip. Equivalent products include the MT48LC16M16A2P-75, K4S561632D, and HY57V161620. Ensure to check specifications like timing, voltage, and pin configuration for compatibility. Always consult the manufacturer's datasheets for detailed information before substitution.

Features

The IS41LV16100B-50TL is a 16Mb (2M x 8) low-voltage CMOS dynamic RAM (DRAM) chip. Key features include:
1. Density: 16 megabits organized as 2M x 8 bits.
2. Voltage: Operates at low voltage, typically 2.7V to 3.6V.
3. Speed: Access time of 50 ns, suitable for various applications requiring fast data retrieval.
4. Interface: CMOS-compatible, allowing easy integration into systems.
5. Packages: Available in a 44-pin TSOP-II package for compact design.
6. Refresh: Supports both RAS-only refresh and CAS-before-RAS refresh options for maintaining data integrity.
7. Power Consumption: Low standby and active power consumption contributing to energy efficiency.
8. Applications: Ideal for portable devices, consumer electronics, and other applications requiring reliable memory solutions.
This combination of features makes the IS41LV16100B-50TL suitable for a wide range of electronic applications, providing both performance and efficiency.

Pinout

The IS41LV16100B-50TL is a 16 Megabit (2 Meg x 8) CMOS dynamic random-access memory (DRAM) device. It has a total of 44 pins.
Key functions of the pins include:
1. Data I/O Pins (D0-D7): These are the 8 data input/output pins used for data transfer.
2. Address Pins (A0-A18): These pins are used to select the address for memory access, allowing for a 2 MB address space.
3. Control Pins:
- CS (Chip Select): Activates the memory chip.
- OE (Output Enable): Enables data output.
- WE (Write Enable): Activates the write operation.
4. Power Supply Pins:
- VDD: Power supply voltage.
- VSS: Ground.
5. Other Control Pins:
- Ras, Cas: Row and column address strobe signals for accessing memory.
The device is designed for low-power and high-speed operation, making it suitable for various applications in computers and electronic devices.

Manufacturer

The IS41LV16100B-50TL is manufactured by Integrated Silicon Solution, Inc. (ISSI). Founded in 1988 and headquartered in San Jose, California, ISSI is a semiconductor company that specializes in developing high-performance memory products. Their product line includes dynamic random-access memory (DRAM), flash memory, and various types of specialty memory solutions.
ISSI serves a variety of markets, including automotive, consumer electronics, industrial, and telecommunications, providing memory solutions that meet the demands of high-speed applications. The company is recognized for its innovation in memory technology and focuses on delivering reliable and cost-effective products to its customers. As a key player in the semiconductor industry, ISSI plays a crucial role in supporting the growing needs of electronic devices with advanced memory solutions.

Application

The IS41LV16100B-50TL is a 16Mb (2M x 8) low-voltage CMOS SRAM suitable for various applications, including:
1. Networking Equipment: Used in routers and switches for high-speed data storage.
2. Consumer Electronics: Found in devices like digital cameras and gaming consoles for fast data access.
3. Industrial Automation: Employed in control systems for real-time data processing.
4. Telecommunications: Utilized in base stations and repeaters for buffering and caching.
5. Embedded Systems: Integrated in microcontrollers and microprocessors for temporary data storage.
Its low power consumption and fast access speeds make it ideal for these applications.

Package

The IS41LV16100B-50TL is packaged in a TSOP II (Thin Small Outline Package) format, which is typically used for memory devices. This package type features a compact design with leads on both sides, suitable for surface mount applications.

Продукты, связанные с IS41LV16100B-50TL