IS43LD16640C-25BLI

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IS43LD16640C-25BLI

+БОМ

IC DRAM 1GBIT PARALLEL 134TFBGA

  • ПроизводительISSI, Интегрированное кремниевое решение Inc.

  • Мфр. Часть #IS43LD16640C-25BLI

  • Пакет TFBGA-134

  • В наличии6523

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Supplier ISSI, Integrated Silicon Solution Inc
Package / Case Tray
Part Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR2-S4
Memory Size 1Gb (64M x 16)
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word Page 15ns
Voltage - Supply 1.14V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TC)
Mounting Type Surface Mount

Обзор

Description

IS43LD16640C-25BLI is an ISSI static RAM (SRAM) device. It provides fast, volatile memory with a parallel, asynchronous interface. The “-25” indicates a 25 ns speed grade, and “BLI” denotes the RoHS-compliant leadless package.
Key points:
- Type: SRAM (not DRAM or ROM) for fast random access; no refresh needed.
- Speed/Voltage: 25 ns speed grade; typically 3.3 V (often 2.7–3.6 V range depending on variant).
- Data width/density: available in common widths (e.g., x8 or x16) with high-density options; exact organization depends on the specific device variant.
- Interface: parallel address and data lines with control signals such as CE (chip enable), OE (output enable), WE (write enable); may include LB/UB for byte enables.
- Applications: caches, buffers, frame buffers, and other high-speed memory roles in embedded systems.
For exact density, word length, pinout, and electrical specs, consult the ISSI datasheet for IS43LD16640C-25BLI or share your package/width details and I’ll summarize precisely.

Features

Here are the typical features of IS43LD16640C-25BLI (as per ISSI SRAM family; please verify with the datasheet for exact specs):
- Static RAM (no refresh required) with separate CE, OE, and WE control
- Low-power, single-supply operation (approx. 2.7–3.6 V; many parts refer to 2.5 V‑range variants)
- Fast access time: 25 ns (typical)
- High-density memory (density and bus width per device variant; check datasheet for exact organization)
- 3-state outputs
- Industrial temperature range often supported (e.g., -40 °C to 85 °C)
- Pb-free, RoHS-compliant packaging (BLI suffix indicates lead-free/leadless packaging options)
- Available in small-outline/leadless packages suitable for compact boards
Note: Exact density (e.g., x-by-bus width), pinout, and voltage range depend on the specific variant. Please consult the official datasheet for precise values.

Manufacturer

Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
ISSI is a fabless semiconductor company that designs and markets DRAM and SRAM memory ICs. It outsources fabrication to third-party foundries and serves markets including computing, networking, consumer electronics, and automotive.

Application

IS43LD16640C-25BLI is a high-speed, low-power memory (SRAM/PSRAM) used as system RAM. Common application areas include:
- Embedded systems and microcontroller/SoC-based designs
- Graphics buffers and frame buffers in display/controllers
- Networking/telecom equipment for caches and packet buffering
- Automotive electronics (infotainment, instrument clusters)
- Industrial control, automation, and smart appliances
- Medical devices needing fast random-access memory
- Portable/battery-powered devices requiring low power memory
Note: verify exact memory type and density from the datasheet for precise suitability.

Package

Ball Grid Array (BGA) package — leadless BGA (package code BLI) from ISSI.

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