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K4A4G165WF-BITD
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ПроизводительSamsung
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Мфр. Часть #K4A4G165WF-BITD
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Лист данных K4A4G165WF-BITD DataSheet
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В наличии7978
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Спецификации
| Атрибут | Ценность |
| Manufacturer | Samsung |
| Package | FBGA-96 |
Обзор
Equivalent
- Micron MT40A512M16LY-075:E
- SK Hynix H5AN4G8NBJR-UHC
- Samsung K4A8G165WC-BCTD
These are 4Gb DDR4 chips with similar specs (speed, density, voltage). Verify pin compatibility and timing before substitution.
Features
- Speed: 2666 Mbps (DDR4-2666)
- Voltage: 1.2V (standard DDR4 operating voltage)
- Density: 4 Gigabit (512MB)
- Organization: x8 (8-bit data bus)
- Refresh: Auto-refresh & self-refresh
- CAS Latency (CL): 15, 16, 18, 19 (programmable)
- Package: 78-ball FBGA
- Operating Temp: Commercial (0°C to 95°C)
- Bank Structure: 8 banks
- Burst Length: 8 (BL8) or 4 (BC4)
- On-Die Termination (ODT): Supported
Designed for high-speed, low-power applications, it’s commonly used in servers, networking, and computing systems.
Pinout
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- Low Voltage: Operates at 1.35V (DDR3L, compatible with 1.5V).
- Speed: Supports 800–1866 Mbps data rates.
- Organization: 8-bit I/O, 8 internal banks.
- Features: On-die termination (ODT), auto-refresh, programmable CAS latency (CL).
Used in low-power applications like mobile devices, networking, and embedded systems.
Manufacturer
This specific chip is a 4Gb (512M x 8) DDR4-2666 component, commonly used in PCs, servers, and embedded systems. Samsung's memory division is renowned for innovation, reliability, and mass production capabilities.