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K4B4G0846E-BMMA
+БОМ-
ПроизводительSamsung
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Мфр. Часть #K4B4G0846E-BMMA
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В наличии12318
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Manufacturer | Samsung |
| Package / Case | FBGA-78 |
Обзор
Description
Key Features:
- Capacity: 4Gb (organized as 512M x 8)
- Speed: Up to 1866 Mbps (DDR3-1866)
- Voltage: 1.35V (Low Power, DDR3L)
- Package: 78-ball FBGA
- Applications: Mobile devices, embedded systems, and power-efficient computing.
It supports auto-refresh, self-refresh, and programmable burst lengths, making it suitable for performance-critical yet energy-conscious designs.
For detailed specs, refer to Samsung’s datasheet.
Equivalent
- H5TC4G83AFR-PBA (SK Hynix)
- MT41K512M4DA-107:A (Micron)
- IS43TR16256A-125KBL (ISSI)
These are 4Gb (512Mx8) DDR3 chips with similar specs (speed, voltage, density). Verify pin compatibility and timing parameters for exact replacements.
Application
- Consumer Electronics: Smart TVs, set-top boxes, gaming consoles.
- Computing: Laptops, desktops, servers, and embedded systems.
- Networking: Routers, switches, and communication equipment.
- Industrial: Automation, medical devices, and IoT applications.
- Automotive: Infotainment and ADAS systems (with extended temp. variants).
It offers low power consumption, high speed (up to 1866 Mbps), and reliability, making it suitable for performance-driven and power-sensitive applications.