K4B4G1646E-BYMA

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K4B4G1646E-BYMA

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4Gbit 1.28V~1.575V 933MHz DDR3L SDRAM FBGA-96 Memory (ICs) RoHS

  • ПроизводительSamsung

  • Мфр. Часть #K4B4G1646E-BYMA

  • Лист данных K4B4G1646E-BYMA DataSheet

  • В наличии20290

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Спецификации

Атрибут Ценность
Packaging FBGA-96
Clock Frequency 933MHz
Supply Current 14mA
Memory Format DDR3L SDRAM
Memory Size 4Gbit
Operating Temperature 0℃~+95℃
Refresh Current 2mA;3mA
Voltage - Supply 1.28V~1.575V

Обзор

Description

The term "K4B4G1646E-BYMA" likely refers to a specific model of DRAM (Dynamic Random Access Memory) chip produced by Samsung. This chip is part of Samsung's DDR3 SDRAM lineup, which is used in various computing devices for high-speed data storage and retrieval.
Key features of the K4B4G1646E-BYMA include a 4Gb (gigabit) memory capacity, organized as 256M x 16 bits, and it operates at a standard voltage of 1.5V, which is common for DDR3 memory. The "BYMA" part of the model number denotes specific packaging or configuration details that are relevant for integration into different devices.
The K4B4G1646E-BYMA is engineered to deliver efficient performance with low power consumption, making it suitable for a wide range of applications, including PCs, laptops, servers, and other electronic devices that require reliable memory solutions. Its design ensures stability and speed, essential for meeting the demands of modern computing environments.

Equivalent

The K4B4G1646E-BYMA is a 4GB DDR3 SDRAM chip from Samsung, typically used in computer memory modules. Equivalent products include:
1. Micron's MT41K256M16HA-125
2. Hynix's H5TQ4G63AFR-PBC
3. Kingston's D2516EC4BXGGB
These alternatives have similar specifications in terms of capacity, speed, and voltage. However, compatibility with specific systems should be verified, as variations in timing and other parameters may exist.

Features

The K4B4G1646E-BYMA is a DRAM memory module produced by Samsung. It is part of the DDR3 SDRAM family and is designed for high-performance computing applications. Here are some key features:
1. Density and Organization: It has a density of 4Gb (gigabits) and is organized as 256M x 16.
2. Speed and Performance: The module supports a data rate of up to 1600 Mbps, making it suitable for applications requiring high-speed data processing.
3. Voltage: Operates at a standard voltage of 1.5V, providing a balance of power efficiency and performance.
4. Package: Comes in a standard FBGA (Fine-Pitch Ball Grid Array) package, which is common for DRAM modules due to its compact form factor and reliable connectivity.
5. Applications: Ideal for use in PCs, laptops, and servers where efficient and fast memory performance is critical.
6. Compatibility: Designed to be compatible with a wide range of hardware configurations that support DDR3 memory.
These features make the K4B4G1646E-BYMA suitable for various computing needs, offering a robust solution for memory-intensive tasks.

Pinout

The K4B4G1646E-BYMA is a 4Gb DDR3 SDRAM chip manufactured by Samsung. It has a 78-ball FBGA package. The primary function of this memory IC is to serve as a dynamic random-access memory module, providing temporary storage for data that the CPU and other components can quickly access. It is typically used in applications such as computers, servers, and other digital devices requiring fast data processing and storage capabilities.

Manufacturer

The K4B4G1646E-BYMA is manufactured by Samsung Electronics. Samsung Electronics is a multinational conglomerate based in South Korea, primarily known for its wide range of electronics products. The company is a global leader in semiconductor manufacturing, consumer electronics, telecommunications equipment, and digital media. Samsung produces a variety of components, such as memory chips, displays, and sensors, which are used in numerous electronic devices worldwide. The company is also well-known for its smartphones, televisions, and home appliances. It operates in diverse sectors and is recognized for its innovation and significant contributions to technology and electronics industries globally.

Application

The K4B4G1646E-BYMA is a 4Gb DDR3 SDRAM chip manufactured by Samsung, commonly used in applications requiring efficient, high-speed memory solutions. Its typical application areas include:
1. Computing Devices: Used in desktops, laptops, and servers for efficient multitasking and fast data processing.
2. Embedded Systems: Incorporated in industrial and consumer electronics where compact, reliable memory is needed.
3. Networking Equipment: Utilized in routers and switches for handling large data throughput.
4. Consumer Electronics: Found in devices such as smart TVs, gaming consoles, and digital cameras.
5. Mobile Devices: Supports efficient performance in smartphones and tablets.
These uses leverage the chip's speed and efficiency to enhance device performance.

Package

The K4B4G1646E-BYMA is a DRAM chip from Samsung, typically found in a Fine Ball Grid Array (FBGA) package.

Frequently Asked Questions


Q: What is the memory capacity of the K4B4G1646E-BYMA?
A: It has a memory size of 4Gbit (512MB), making it suitable for low-power, high-density applications like servers or embedded systems.


Q: What voltage range does this DDR3L SDRAM support?
A: It supports a supply voltage range of 1.28V to 1.575V, compliant with DDR3L (low-voltage) standards for reduced power consumption.


Q: What is the maximum operating clock frequency?
A: The clock frequency is 933MHz, corresponding to a DDR3-1866 data rate, offering high-speed data transfer performance.


Q: What is the operating temperature range for this component?
A: The operating temperature is 0°C to +95°C, suitable for commercial and industrial environments requiring thermal stability.


Q: What is the typical current consumption during operation?
A: The typical supply current is 14mA, with a refresh current of 2mA (typical) and 3mA (maximum), enabling efficient power management.


Q: In which package is this memory chip available?
A: It comes in an FBGA-96 package, designed for surface-mount assembly with high-density PCB layouts.


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