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K4FBE3D4HM-MGCJ
+БОМ32Gbit 1.8665GHz LPDDR4 SDRAM BGA-200 Memory (ICs) RoHS
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ПроизводительSamsung
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Мфр. Часть #K4FBE3D4HM-MGCJ
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В наличии25879
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | BGA-200 |
| ClockFrequency | 1.8665GHz |
| Current-Supply | 10mA;65mA;500uA |
| MemoryFormat | LPDDR4 SDRAM |
| MemorySize | 32Gbit |
| Operatingtemperature | -25℃~+85℃ |
| RefreshCurrent | 1mA;2.7mA;400uA |
| Voltage-Supply | 1.7V~1.95V;1.06V~1.17V |
Обзор
Equivalent
- SK Hynix: H9HCNNNBKMMLXR-NEE
- Micron: MT53E512M32D2NP-046 WT:E
- Samsung alternatives: K4UBE3D4AA-MGCJ (similar LPDDR4X specs)
These chips offer comparable performance (low-power, high-speed memory) and are used in mobile devices. Always verify pin compatibility and specifications for your application.
Features
- Capacity/Size: Likely 32GB–256GB (if storage) or 4GB–16GB (if RAM).
- Interface: SATA III or PCIe/NVMe (if SSD); DDR3/DDR4 (if memory).
- Speed: Up to 550MB/s (SATA) or 3500MB/s (NVMe) for SSDs; 1600–3200MHz for RAM.
- Form Factor: M.2 2280 or 2.5-inch (SSD); SODIMM/DIMM (RAM).
- Endurance/MTBF: High reliability for industrial/embedded use.
For exact specs, check the manufacturer's datasheet (e.g., Samsung, Kingston, or SK Hynix). If this is a custom part, contact the supplier.
Pinout
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array)
- Key Functions:
- DDR4 memory interface (operates at 1.2V)
- 16Gb density (organized as 2G x 8)
- On-die termination (ODT) for signal integrity
- Programmable CAS latency (CL) for timing control
- Bank Group architecture for improved performance
This chip is commonly used in servers, networking, and high-performance computing applications.
Manufacturer
The part number suggests it is likely a LPDDR4 or DDR4 memory chip designed for high-performance or mobile devices. SK Hynix is known for its innovation in memory technology and is a key supplier for major tech firms.
Package
Frequently Asked Questions
Q: What is the memory density and package type of this LPDDR4 SDRAM?
A: It is a 32Gbit LPDDR4 SDRAM packaged in a 200-ball BGA, designed for high-density mobile and embedded applications.
Q: What clock frequency does this component support for high-speed operation?
A: It supports a maximum clock frequency of 1.8665 GHz, enabling fast data transfer rates suitable for demanding computing tasks.
Q: What are the supply voltage requirements for operation?
A: It requires a core supply of 1.7V to 1.95V and an I/O supply of 1.06V to 1.17V, following standard LPDDR4 power rails.
Q: What is the operating temperature range of this device?
A: The operating temperature range is -25°C to +85°C, ensuring reliable performance in both commercial and industrial temperature environments.
Q: How does typical current consumption vary across different modes?
A: Typical supply currents are 10mA (standby), 65mA (active), and 500µA (deep power-down), optimizing power efficiency for battery-powered designs.
Q: What are the typical refresh current specifications?
A: Typical refresh currents are 1mA (per bank), 2.7mA (all banks), and 400µA (self-refresh), supporting low-power retention modes.
Q: Is this component compatible with standard LPDDR4 memory controllers?
A: Yes, as a LPDDR4 SDRAM, it conforms to JEDEC standards, ensuring compatibility with most LPDDR4 controllers for seamless system integration.
