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K9F2G08U0B-PCB0
+БОМ-
ПроизводительАссамблея JLCPCB
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Мфр. Часть #K9F2G08U0B-PCB0
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В наличии4000
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Manufacturer | JLCPCB Assembly |
| Package / Case | TSOPI-48 |
Обзор
Description
With its compact form factor and low power consumption, the K9F2G08U0B-PCB0 is ideal for applications requiring fast data access and storage capabilities. It supports various programming and erasing modes, enhancing versatility in design. Its reliability is bolstered by built-in error correction and wear leveling features, which prolong the lifespan and performance of the memory. Overall, this NAND flash memory solution is essential for developers looking to integrate high-density storage in their electronic products.
Equivalent
Features
1. Memory Density: 2 Gbit (256 MB) capacity, suitable for various embedded applications.
2. Architecture: NAND flash technology, providing high performance and reliability.
3. Interface: Supports a parallel interface, allowing easy integration into existing systems.
4. Page Size: Typically features a page size of 2 KB or 4 KB, optimizing read/write operations.
5. Block Erase: Erase block size is often 128 KB, enhancing data management efficiency.
6. Endurance: Designed for high endurance, typically supporting around 10,000 program/erase cycles.
7. Low Power Consumption: Optimized for low power usage, making it suitable for battery-operated devices.
8. Temperature Range: Operates in a wide temperature range, ensuring reliability in various environmental conditions.
These features make the K9F2G08U0B-PCB0 ideal for consumer electronics, automotive applications, and industrial devices.
Pinout
The primary functions of the pins include:
1. Data Pins (DQ0-DQ7): 8-bit data input/output for reading and writing data.
2. Command Pins (CLE, ALE): Command latch enable (CLE) and address latch enable (ALE) for selecting commands and addresses.
3. Chip Enable (CE): Activates the chip for operations.
4. Write Enable (WE): Initiates write operations.
5. Read Enable (RE): Initiates read operations.
6. Ready/Busy (R/B): Indicates the status of the chip (ready or busy).
7. Ground (VSS): Ground connection.
8. Power Supply (VCC): Power supply input for the chip.
9. Block Management Pins: For managing block protection and locking.
These functionalities enable the chip to perform read, write, and erase operations efficiently in various applications, such as embedded systems and storage devices.
Manufacturer
Samsung Electronics is a leading player in the global semiconductor industry and is part of the larger Samsung Group, which operates in a diverse range of sectors, including telecommunications, home appliances, and display technologies. The company is recognized for its innovation and technological advancements, holding a significant share of the global market for memory components.
Application
Package
Frequently Asked Questions
Q: What is the storage capacity of the K9F2G08U0B-PCB0?
A: It is a 2Gbit (256M x 8-bit) NAND Flash memory, providing 256MB of raw storage capacity.
Q: What package type does this component use?
A: It is supplied in a TSOPI-48 package, ideal for surface-mount assembly and space-constrained designs.
Q: Is this part suitable for high-speed data storage applications?
A: Yes, it supports fast page read and program operations typical for NAND Flash, suitable for embedded storage and boot memory.
Q: Does this component require specific voltage levels?
A: It operates on a standard 2.7V to 3.6V power supply, making it compatible with common 3.3V logic systems.
Q: Can this flash memory be used for firmware storage in MCU designs?
A: Yes, its 8-bit data bus and block-erase architecture are commonly used for code shadowing or data logging in embedded systems.
Q: Is this a single-level cell (SLC) or multi-level cell (MLC) device?
A: Based on the part number prefix, it is an SLC NAND, offering higher endurance and reliability compared to MLC types.
Q: What is the typical page size for this memory?
A: Standard operation involves 2KB pages with 64 bytes of spare area per page, common for 2Gbit SLC NAND Flash.