Изображения являются только для ссылки
M29W128GH70ZA3E
+БОМIC FLASH 128MBIT PARALLEL 64TBGA
-
ПроизводительКомпания Micron Technology Inc.
-
Мфр. Часть #M29W128GH70ZA3E
-
Лист данных M29W128GH70ZA3E DataSheet
-
В наличии9811
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8, 8M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 70ns |
| Access Time | 70 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 64-TBGA |
| Supplier Device Package | 64-TBGA (10x13) |
| Base Product Number | M29W128 |
Обзор
Description
Key specifications include a supply voltage range of 2.7V to 3.6V, making it suitable for low-power applications. The device supports a standard serial interface, enabling easy integration with microcontrollers and other digital systems. It typically offers fast data access speeds and a high endurance rating, allowing for numerous program/erase cycles.
Additionally, the M29W128GH70ZA3E includes built-in features for secure data retention, such as error correction and wear leveling, enhancing the reliability of data storage. Its compact form factor enables efficient space utilization in electronic designs.
Overall, the M29W128GH70ZA3E is a versatile solution for modern applications requiring reliable flash memory with efficient performance and data integrity.
Equivalent
Features
1. Memory Organization: 8 bits wide, with 16M x 8 configuration.
2. Voltage Supply: Operates typically at 2.7V to 3.6V.
3. Access Time: Fast read access times, typically around 70 ns.
4. Programming: Supports byte, word, and page programming modes.
5. Endurance: Offers up to 100,000 program/erase cycles.
6. Data Retention: Maintains data integrity for 20 years at 85°C.
7. Interface: SPI-compatible interface for easy integration.
8. Low Power Consumption: Designed for low power operation, suitable for battery-operated devices.
9. Security Features: Supports software data protection and hardware protection options.
10. Availability: Available in various package options for flexibility in design.
This device is ideal for embedded applications, consumer electronics, and automotive sectors requiring reliable non-volatile memory.
Manufacturer
STMicroelectronics is known for its innovation and commitment to providing high-quality semiconductor solutions that drive technological advancements across different sectors. The M29W128GH70ZA3E itself is a 128 Mb NOR Flash memory device, commonly used in applications requiring non-volatile storage, such as automotive systems, consumer electronics, and embedded systems.