Изображения являются только для ссылки
MDC3105DMT1G
+БОМIC PWR DRIVER BIPOLAR 1:1 SC74
-
ПроизводительОнсеми
-
Мфр. Часть #MDC3105DMT1G
-
В наличии6510
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| Base Product Number | MDC3105 |
| Switch Type | Relay, Solenoid Driver |
| Number of Outputs | 2 |
| Ratio - Input:Output | 1:1 |
| Output Configuration | Low Side |
| Output Type | Bipolar |
| Interface | On/Off |
| Voltage - Load | 6V (Max) |
| Voltage - Supply (Vcc/Vdd) | Not Required |
| Current - Output (Max) | 500mA |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-74 |
| Package | SC-74, SOT-457 |
| Packaging | Bulk, Tape & Reel (TR) |
Обзор
Description
Key specifications include a maximum collector current (Ic) of 200 mA, a collector-emitter voltage (Vceo) of 40 V, and a power dissipation (Pd) of around 225 mW. The device typically operates in a temperature range from -55°C to 150°C, ensuring reliability under different conditions.
The transistor is packaged in a SOT-23 form factor, which is surface-mount-compatible, allowing for compact circuit designs. Its small footprint is advantageous for high-density circuits or portable devices. The MDC3105DMT1G's versatility, combined with low power consumption, makes it a popular choice for engineers and designers looking to implement efficient electronic solutions.
Equivalent
1. BC846/BC856 series (dual NPN/PNP transistors)
2. BC817/BC807 series (dual NPN/PNP transistors)
3. PMBT3904/PMBT3906 (dual NPN/PNP transistors)
These alternatives can vary in specifications, so it's essential to verify parameters like current, voltage ratings, and package type to ensure compatibility.
Features
1. Package Type: SOT-123, which is a small surface-mount package suitable for compact electronic designs.
2. Collector-Emitter Voltage (VCEO): It can handle a maximum of 45V, ensuring good performance across a range of voltages.
3. Collector Current (IC): Capable of handling up to 600 mA, making it suitable for low to moderate power applications.
4. Power Dissipation: Provides a power dissipation of 225 mW, allowing for adequate heat management in compact circuits.
5. Transition Frequency (fT): Offers a high transition frequency of about 150 MHz, which is beneficial for high-speed applications.
6. Complementary NPN Pair: The device can be paired with an NPN transistor for push-pull amplifier designs.
7. RoHS Compliant: It adheres to environmental standards, making it safe for use in eco-friendly designs.
These features make the MDC3105DMT1G suitable for use in various electronics, including amplification circuits, signal processing, and switching operations.
Pinout
1. Gate (G): This pin controls the flow of current between the drain and source. By applying a voltage to the gate, you can turn the transistor on or off.
2. Source (S): This is the terminal through which the charge carriers enter the transistor. For an N-channel MOSFET, electrons flow out of the source.
3. Drain (D): This is the terminal through which the charge carriers leave the transistor. For an N-channel MOSFET, electrons flow into the drain.
These transistors are typically used for switching and amplification in electronic circuits due to their efficiency and small size.