Спецификации
| Атрибут | Ценность |
| Package | Tube |
| ProductStatus | Active |
| TransistorType | PNP |
| Current-Collector(Ic)(Max) | 8 A |
| Voltage-CollectorEmitterBreakdown(Max) | 80 V |
| VceSaturation(Max)@IbIc | 1V @ 400mA, 8A |
| Current-CollectorCutoff(Max) | 1µA |
| DCCurrentGain(hFE)(Min)@IcVce | 40 @ 4A, 1V |
| Power-Max | 1.75 W |
| Frequency-Transition | 90MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Обзор
Description
"MJD45H11G" does not appear to be a widely recognized term, model, or concept as of my last update in October 2023. If it pertains to a specific subject such as a course code, a product model, a scientific term, or a project, it would be important to refer to the specific context in which it is used for a precise introduction.
If "MJD45H11G" is a course code, it could represent a university or college class, likely with a subject focus denoted by the letters and a course number for identification. If it's a product model, such as electronics or machinery, it would refer to the specific make and design of that item. In scientific terms, it could be a designation for a study, component, or concept that requires further context.
For an accurate introduction, I recommend checking official sources related to the context where "MJD45H11G" is used, such as course catalogs, product manuals, or scientific papers.
If "MJD45H11G" is a course code, it could represent a university or college class, likely with a subject focus denoted by the letters and a course number for identification. If it's a product model, such as electronics or machinery, it would refer to the specific make and design of that item. In scientific terms, it could be a designation for a study, component, or concept that requires further context.
For an accurate introduction, I recommend checking official sources related to the context where "MJD45H11G" is used, such as course catalogs, product manuals, or scientific papers.
Equivalent
The MJD45H11G is a NPN power transistor. Equivalent products include the TIP45 (NPN), BD911, and 2N6488. These transistors have similar parameters and can be used in equivalent applications. However, always check the datasheet to ensure compatibility with your specific circuit requirements.
Features
The MJD45H11G is a silicon bipolar power transistor designed for applications requiring high voltage and high-current handling. Here are its key features:
1. High Voltage Capability: It supports a collector-emitter voltage (V_CE) of up to 80V, making it suitable for applications dealing with higher voltages.
2. High Current Handling: It has a maximum collector current (I_C) of 10A, which allows it to handle significant power loads.
3. Low Collector-Emitter Saturation Voltage: This feature ensures efficient operation by reducing power loss during saturation.
4. TO-220 Package: The transistor is housed in a TO-220 package, which provides effective heat dissipation and is easy to mount on a heatsink.
5. Wide Range of Applications: Suitable for use in linear amplifiers, switching applications, and general-purpose amplification.
6. Pb-Free and RoHS Compliant: Environmentally friendly, adhering to current electronic industry standards.
These features make the MJD45H11G a versatile choice for various high-power electronic circuits.
1. High Voltage Capability: It supports a collector-emitter voltage (V_CE) of up to 80V, making it suitable for applications dealing with higher voltages.
2. High Current Handling: It has a maximum collector current (I_C) of 10A, which allows it to handle significant power loads.
3. Low Collector-Emitter Saturation Voltage: This feature ensures efficient operation by reducing power loss during saturation.
4. TO-220 Package: The transistor is housed in a TO-220 package, which provides effective heat dissipation and is easy to mount on a heatsink.
5. Wide Range of Applications: Suitable for use in linear amplifiers, switching applications, and general-purpose amplification.
6. Pb-Free and RoHS Compliant: Environmentally friendly, adhering to current electronic industry standards.
These features make the MJD45H11G a versatile choice for various high-power electronic circuits.
Pinout
The MJD45H11G is a NPN bipolar junction transistor (BJT). It typically comes in a TO-252 (DPAK) package, which has three pins. The pin configuration is as follows:
1. Pin 1 (Base): This is the control pin for the transistor. A small current input to this pin controls the larger current flow between the collector and emitter.
2. Pin 2 (Collector): This is one of the output terminals of the transistor. The current flows from the collector to the emitter when the transistor is in the "on" state.
3. Pin 3 (Emitter): This is the other output terminal of the transistor through which the current exits after flowing through the collector.
The MJD45H11G is commonly used in switching and amplification applications, capable of handling medium power levels.
1. Pin 1 (Base): This is the control pin for the transistor. A small current input to this pin controls the larger current flow between the collector and emitter.
2. Pin 2 (Collector): This is one of the output terminals of the transistor. The current flows from the collector to the emitter when the transistor is in the "on" state.
3. Pin 3 (Emitter): This is the other output terminal of the transistor through which the current exits after flowing through the collector.
The MJD45H11G is commonly used in switching and amplification applications, capable of handling medium power levels.
Manufacturer
The MJD45H11G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a publicly traded American semiconductor supplier company that designs, manufactures, and markets a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. These products are used in various sectors, including automotive, industrial, cloud, and Internet of Things (IoT) applications. The company focuses on energy-efficient electronics, providing solutions for power management, sensing, and connectivity.
Application
The MJD45H11G is a medium power NPN bipolar junction transistor (BJT) commonly used in various electronic applications. Its application areas include:
1. Amplification: Used in audio and RF amplifier circuits.
2. Switching: Suitable for switching inductive loads, relays, and solenoids.
3. Power Regulation: Functions in power regulation circuits like voltage regulators.
4. Motor Control: Applied in motor driver circuits for speed control.
5. Signal Processing: Utilized in signal processing units for amplification and buffering.
6. Lighting Systems: Employed in LED and other lighting control applications.
These features make it versatile for both consumer electronics and industrial systems.
1. Amplification: Used in audio and RF amplifier circuits.
2. Switching: Suitable for switching inductive loads, relays, and solenoids.
3. Power Regulation: Functions in power regulation circuits like voltage regulators.
4. Motor Control: Applied in motor driver circuits for speed control.
5. Signal Processing: Utilized in signal processing units for amplification and buffering.
6. Lighting Systems: Employed in LED and other lighting control applications.
These features make it versatile for both consumer electronics and industrial systems.
Package
The MJD45H11G is a NPN bipolar power transistor, and it typically comes in a TO-220 package type. This package is characterized by its three leads and a tab for heat dissipation, making it suitable for applications that require medium power handling.
