MJE15033G

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MJE15033G

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TRANS PNP 250V 8A TO220

365 Дни гарантии качества

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90-гарантия послепродажного дня

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Спецификации

Атрибут Ценность
Supplier onsemi
Package / Case Tube
Part Status Active
Transistor Type PNP
Current - Collector(Ic)(Max) 8 A
Voltage - Collector Emitter Breakdown(Max) 250 V
Vce Saturation(Max) @ Ib Ic 500mV @ 100mA, 1A
Current - Collector Cutoff(Max) 10µA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 10 @ 2A, 5V
Power - Max 50 W
Frequency - Transition 30MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole

Обзор

Description

The MJE15033G is a high-power NPN bipolar junction transistor (BJT) designed for use in audio amplification and high-voltage power supply applications. It is part of the MJE150xx series, known for its robust performance in demanding conditions. The transistor is housed in a TO-220 package, which provides good thermal conductivity, making it suitable for applications where heat dissipation is crucial.
Key specifications of the MJE15033G include a collector-emitter voltage (Vceo) of 250V, a collector current (Ic) of 8A, and a power dissipation (Pd) of 50W, allowing it to handle significant power levels. It also features high gain bandwidth, making it well-suited for high-frequency applications.
The MJE15033G is commonly used in audio amplifiers, power regulators, and various industrial applications where high voltage and current handling are required. Its durability and reliability, especially in high-power and high-frequency circuits, make it a popular choice for engineers and designers working with power management and amplification systems.

Equivalent

The MJE15033G is a high-power NPN transistor. Equivalent products include:
1. TIP31C
2. 2N3055 (although this is a TO-3 package, it has similar electrical characteristics)
3. BD139 (for lower power applications)
4. TIP41C
Always verify electrical characteristics and pin configurations when substituting components to ensure compatibility with your specific application.

Features

The MJE15033G is a NPN bipolar junction transistor (BJT) designed for high-power applications. Key features include:
1. High Voltage: It can handle a collector-emitter voltage (Vceo) of up to 400V, making it suitable for high-voltage applications.
2. High Current: Capable of carrying a collector current (Ic) of up to 8A, allowing it to manage substantial power loads.
3. Power Dissipation: With a power dissipation rating of 50W, it is well-suited for use in high-power circuits.
4. Complementary Pair: Often used with its complementary PNP counterpart, the MJE15032G, in push-pull amplifier designs.
5. Transition Frequency: Provides a transition frequency of 30 MHz, beneficial for high-speed switching applications.
6. Package Type: Comes in a TO-220 package, which is widely used for power semiconductors due to its efficient heat dissipation features.
7. RoHS Compliance: The "G" suffix indicates that this component is RoHS compliant, ensuring it is free from hazardous substances.
These features make the MJE15033G suitable for use in audio amplifiers, power supplies, and various other electronic circuits requiring robust power handling.

Pinout

The MJE15033G is a silicon NPN power transistor. It typically comes in a TO-220 package, featuring 3 pins. The pin configuration for the MJE15033G is as follows:
1. Pin 1 (Base): This is the control pin of the transistor, where the input signal is applied to control the operation of the transistor.
2. Pin 2 (Collector): This pin is connected to the main current-carrying terminal. It is where the load is usually connected, and it handles the flow of current through the device.
3. Pin 3 (Emitter): This is the output terminal through which current leaves the transistor. It is typically connected to ground in a circuit.
The MJE15033G is used in applications requiring high power and high voltage, with typical uses in audio amplification, power amplification, and switching power supplies. It is designed to handle high current and voltage, making it suitable for various high-performance applications.

Manufacturer

The MJE15033G is a bipolar junction transistor manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading semiconductor manufacturing company specializing in the design and production of a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. The company serves various markets such as automotive, industrial, cloud power, and Internet of Things (IoT) applications. onsemi is recognized for its focus on energy-efficient innovations and solutions that contribute to more sustainable electronics.

Application

The MJE15033G is a high-power NPN bipolar junction transistor widely used in audio applications and power amplification. Its primary applications include audio amplifiers, where it can drive high-power speakers and ensure sound clarity and consistency. Additionally, it is used in power supplies and converters due to its ability to handle high voltages and currents, making it suitable for various industrial power control systems. The transistor’s robust design also allows it to be utilized in motor control circuits and switching applications, where reliability and efficiency are crucial. Its versatility in handling high power makes it an ideal choice for various electronic circuits requiring strong and reliable performance.

Package

The MJE15033G is a bipolar junction transistor (BJT) packaged in a TO-220 case. This package type is known for its capability to handle moderate power levels and provides efficient heat dissipation with its metal tab, which can be mounted to a heat sink. It is commonly used in audio amplifiers and power management applications.

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