Спецификации
| Атрибут | Ценность |
| Package / Case | Tube |
| Part Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 10 A |
| Voltage - Collector Emitter Breakdown(Max) | 60 V |
| Vce Saturation(Max) @ Ib Ic | 8V @ 3.3A, 10A |
| Current - Collector Cutoff(Max) | 700µA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 20 @ 4A, 4V |
| Power - Max | 75 W |
| Frequency - Transition | 2MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
Обзор
Description
The MJE2955T is a PNP bipolar junction transistor (BJT) widely used in electronic circuits for switching and amplification purposes. It is part of the MJE2955 series and is designed to handle medium power applications. The transistor is encapsulated in a TO-220 package, which aids in efficient heat dissipation.
Key specifications include a collector-emitter voltage (V_CEO) of -60V, a collector current (I_C) of -10A, and a power dissipation (P_D) of 75W. Its gain bandwidth product is sufficient for many general-purpose applications, making it versatile. The MJE2955T is complementary to the MJ2955, a similar NPN transistor, allowing for push-pull amplifier configurations.
This transistor is typically used in audio amplifiers, motor drivers, and power management systems. Its robust specifications make it suitable for applications requiring reliable performance under various conditions. When using the MJE2955T, proper circuit design considerations, such as heat sinking and biasing, are essential to ensure optimal performance and longevity.
Key specifications include a collector-emitter voltage (V_CEO) of -60V, a collector current (I_C) of -10A, and a power dissipation (P_D) of 75W. Its gain bandwidth product is sufficient for many general-purpose applications, making it versatile. The MJE2955T is complementary to the MJ2955, a similar NPN transistor, allowing for push-pull amplifier configurations.
This transistor is typically used in audio amplifiers, motor drivers, and power management systems. Its robust specifications make it suitable for applications requiring reliable performance under various conditions. When using the MJE2955T, proper circuit design considerations, such as heat sinking and biasing, are essential to ensure optimal performance and longevity.
Equivalent
The MJE2955T is a PNP power transistor. Equivalent products include:
1. TIP2955
2. 2N2955
3. 2N3055 (PNP version)
4. MJ2955
5. TIP42 (lower current rating)
6. BD912 (different package)
Always check the datasheets to ensure that the electrical characteristics and package type match your application's requirements.
1. TIP2955
2. 2N2955
3. 2N3055 (PNP version)
4. MJ2955
5. TIP42 (lower current rating)
6. BD912 (different package)
Always check the datasheets to ensure that the electrical characteristics and package type match your application's requirements.
Features
The MJE2955T is a silicon PNP bipolar junction transistor commonly used for general-purpose power amplification and switching applications. Key features include:
1. Type: PNP transistor.
2. Package: TO-220, which provides good heat dissipation.
3. Collector-Emitter Voltage (Vce): -60V, indicating the maximum voltage it can handle between collector and emitter.
4. Collector Current (Ic): -15A, the maximum current it can handle through the collector.
5. Power Dissipation (Ptot): 75W, representing the maximum power the device can dissipate.
6. Transition Frequency (fT): 2 MHz, which is suitable for low to medium frequency applications.
7. DC Current Gain (hFE): Typically ranges from 20 to 100, indicating moderate gain capability.
8. Operating Temperature: -65°C to 150°C, allowing it to function in diverse environments.
9. Applications: Suitable for audio amplifiers, power management, switching regulators, and motor control circuits.
The MJE2955T is valued for its robustness and reliability, making it a popular choice for various industrial and consumer electronic applications.
1. Type: PNP transistor.
2. Package: TO-220, which provides good heat dissipation.
3. Collector-Emitter Voltage (Vce): -60V, indicating the maximum voltage it can handle between collector and emitter.
4. Collector Current (Ic): -15A, the maximum current it can handle through the collector.
5. Power Dissipation (Ptot): 75W, representing the maximum power the device can dissipate.
6. Transition Frequency (fT): 2 MHz, which is suitable for low to medium frequency applications.
7. DC Current Gain (hFE): Typically ranges from 20 to 100, indicating moderate gain capability.
8. Operating Temperature: -65°C to 150°C, allowing it to function in diverse environments.
9. Applications: Suitable for audio amplifiers, power management, switching regulators, and motor control circuits.
The MJE2955T is valued for its robustness and reliability, making it a popular choice for various industrial and consumer electronic applications.
Pinout
The MJE2955T is a PNP power transistor commonly used in various electronic applications. It has three pins:
1. Emitter (E): This is typically connected to ground in common-emitter configurations. It is the terminal through which the conventional current exits the transistor.
2. Base (B): This terminal controls the transistor's operation. A small current entering the base is used to control a larger current flow between the collector and the emitter.
3. Collector (C): This terminal is connected to the load and is the main current exit from the transistor. In a common-emitter configuration, current flows from the collector to the emitter when the transistor is on.
These pins are arranged in a TO-220 package, which is common for power transistors due to its ability to handle higher power and heat dissipation. The MJE2955T is often used in amplifier circuits, power regulators, and switching applications due to its capacity to handle significant voltage and current levels.
1. Emitter (E): This is typically connected to ground in common-emitter configurations. It is the terminal through which the conventional current exits the transistor.
2. Base (B): This terminal controls the transistor's operation. A small current entering the base is used to control a larger current flow between the collector and the emitter.
3. Collector (C): This terminal is connected to the load and is the main current exit from the transistor. In a common-emitter configuration, current flows from the collector to the emitter when the transistor is on.
These pins are arranged in a TO-220 package, which is common for power transistors due to its ability to handle higher power and heat dissipation. The MJE2955T is often used in amplifier circuits, power regulators, and switching applications due to its capacity to handle significant voltage and current levels.
Manufacturer
The MJE2955T is a PNP bipolar junction transistor manufactured by several semiconductor companies. Notable manufacturers include ON Semiconductor (now known as onsemi) and STMicroelectronics, among others.
onsemi is a leading supplier of semiconductor-based solutions, focusing on automotive, industrial, and consumer markets. They specialize in power and signal management, logic, discrete, and custom devices, which contribute to energy-efficient electronics and systems.
STMicroelectronics is a global semiconductor company that designs and manufactures a wide range of products, including discrete and integrated semiconductor devices. They serve various sectors such as automotive, industrial, personal electronics, and communications equipment.
Both companies are known for producing reliable and high-quality semiconductor components widely used in electronic circuits and systems worldwide.
onsemi is a leading supplier of semiconductor-based solutions, focusing on automotive, industrial, and consumer markets. They specialize in power and signal management, logic, discrete, and custom devices, which contribute to energy-efficient electronics and systems.
STMicroelectronics is a global semiconductor company that designs and manufactures a wide range of products, including discrete and integrated semiconductor devices. They serve various sectors such as automotive, industrial, personal electronics, and communications equipment.
Both companies are known for producing reliable and high-quality semiconductor components widely used in electronic circuits and systems worldwide.
Application
The MJE2955T is a PNP bipolar junction transistor commonly used in various electronic applications. Its primary areas include:
1. Switching Applications: Utilized in low to medium power switching circuits.
2. Amplification: Employed in audio amplifiers and signal amplification circuits due to its linear characteristics.
3. Power Management: Suitable for voltage regulation and power management circuits.
4. Motor Drivers: Used in controlling motors and actuators in robotics and industrial systems.
5. Relay Drivers: Acts as an interface between low-power control circuits and high-power loads.
6. General Purpose: Suitable for various general-purpose electronic projects and educational purposes.
Its versatility and robust performance make it popular in both hobbyist and industrial applications.
1. Switching Applications: Utilized in low to medium power switching circuits.
2. Amplification: Employed in audio amplifiers and signal amplification circuits due to its linear characteristics.
3. Power Management: Suitable for voltage regulation and power management circuits.
4. Motor Drivers: Used in controlling motors and actuators in robotics and industrial systems.
5. Relay Drivers: Acts as an interface between low-power control circuits and high-power loads.
6. General Purpose: Suitable for various general-purpose electronic projects and educational purposes.
Its versatility and robust performance make it popular in both hobbyist and industrial applications.
Package
The MJE2955T is a PNP power transistor typically available in a TO-220 package type. This package allows for efficient heat dissipation and is commonly used in power amplification and switching applications.