Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 600 mA |
| Voltage - Collector Emitter Breakdown(Max) | 160 V |
| Vce Saturation(Max) @ Ib Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff(Max) | 100nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 80 @ 10mA, 5V |
| Power - Max | 225 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Обзор
Description
The MMBT5551LT1G is a general-purpose NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for switching and amplification in low-power applications. Key features include:
- High current gain (hFE) for efficient signal amplification.
- Low saturation voltage, enhancing switching performance.
- Compact SOT-23 package, ideal for space-constrained designs.
- Voltage rating: 160V (VCEO), suitable for moderate-voltage circuits.
- Current rating: 600mA (IC).
Common uses include load switching, signal amplification, and driver stages in consumer electronics, automotive systems, and industrial controls. Its small size and reliability make it a popular choice for PCB designs.
For detailed specs, refer to the datasheet.
- High current gain (hFE) for efficient signal amplification.
- Low saturation voltage, enhancing switching performance.
- Compact SOT-23 package, ideal for space-constrained designs.
- Voltage rating: 160V (VCEO), suitable for moderate-voltage circuits.
- Current rating: 600mA (IC).
Common uses include load switching, signal amplification, and driver stages in consumer electronics, automotive systems, and industrial controls. Its small size and reliability make it a popular choice for PCB designs.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the MMBT5551LT1G (NPN transistor, SOT-23) include:
- 2N5551 (TO-92 package)
- BC847B (SOT-23, similar specs)
- KSC1845 (higher voltage rating)
- PXT5551 (SOT-89, higher power)
- FMMT5551 (SOT-23, comparable specs).
Check datasheets for exact parameter matching.
- 2N5551 (TO-92 package)
- BC847B (SOT-23, similar specs)
- KSC1845 (higher voltage rating)
- PXT5551 (SOT-89, higher power)
- FMMT5551 (SOT-23, comparable specs).
Check datasheets for exact parameter matching.
Features
The MMBT5551LT1G is an NPN bipolar junction transistor (BJT) with the following key features:
- Type: NPN (General Purpose)
- Voltage Ratings:
- Collector-Emitter Voltage (V_CEO): 160V
- Collector-Base Voltage (V_CBO): 180V
- Emitter-Base Voltage (V_EBO): 6V
- Current Ratings:
- Continuous Collector Current (I_C): 600mA
- Peak Collector Current (I_CM): 1A
- Power Dissipation (P_D): 350mW
- Gain (h_FE): 50–250 (at 10mA, 1V)
- Package: SOT-23 (Small Surface-Mount)
- Switching Speed: Moderate (Transition Frequency ~100MHz)
Ideal for amplification and switching in low-power applications. Compact and efficient for portable electronics.
- Type: NPN (General Purpose)
- Voltage Ratings:
- Collector-Emitter Voltage (V_CEO): 160V
- Collector-Base Voltage (V_CBO): 180V
- Emitter-Base Voltage (V_EBO): 6V
- Current Ratings:
- Continuous Collector Current (I_C): 600mA
- Peak Collector Current (I_CM): 1A
- Power Dissipation (P_D): 350mW
- Gain (h_FE): 50–250 (at 10mA, 1V)
- Package: SOT-23 (Small Surface-Mount)
- Switching Speed: Moderate (Transition Frequency ~100MHz)
Ideal for amplification and switching in low-power applications. Compact and efficient for portable electronics.
Pinout
The MMBT5551LT1G is a SOT-23 packaged NPN bipolar transistor with 3 pins (Emitter, Base, Collector).
Key Functions:
- High voltage (160V) switching and amplification.
- Low current (600mA max collector current).
- Fast switching for general-purpose applications.
Pinout (SOT-23):
1. Emitter (E) – Pin 1
2. Base (B) – Pin 2
3. Collector (C) – Pin 3
Commonly used in power management, amplification, and switching circuits.
Key Functions:
- High voltage (160V) switching and amplification.
- Low current (600mA max collector current).
- Fast switching for general-purpose applications.
Pinout (SOT-23):
1. Emitter (E) – Pin 1
2. Base (B) – Pin 2
3. Collector (C) – Pin 3
Commonly used in power management, amplification, and switching circuits.
Application
The MMBT5551LT1G, a general-purpose NPN transistor, is commonly used in:
1. Switching Circuits – Fast switching in digital and power applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Load Drivers – Driving relays, LEDs, or small motors.
4. Signal Processing – Used in oscillators, timers, and pulse generators.
5. Consumer Electronics – Found in TVs, radios, and portable devices.
Its SOT-23 package makes it suitable for compact, low-power designs.
1. Switching Circuits – Fast switching in digital and power applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Load Drivers – Driving relays, LEDs, or small motors.
4. Signal Processing – Used in oscillators, timers, and pulse generators.
5. Consumer Electronics – Found in TVs, radios, and portable devices.
Its SOT-23 package makes it suitable for compact, low-power designs.
Package
The MMBT5551LT1G is a SOT-23 packaged NPN transistor. This small surface-mount package is widely used for general-purpose amplification and switching applications. The SOT-23 has three leads and is compact, making it suitable for space-constrained PCB designs.
