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MMBF4393
+БОМJFET N-CH 30V SOT23-3
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ПроизводительОнсеми
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Мфр. Часть #MMBF4393
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Лист данных MMBF4393 DataSheet
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В наличии8429
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 20 V |
| Voltage - Cutoff (VGS off) @ Id | 500 mV @ 1 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 14pF @ 20V |
| Power - Max | 350 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Base Product Number | MMBF43 |
| Resistance - RDS(On) | 100 Ohms |
Обзор
Description
Students learn to apply quantitative methods to evaluate investment opportunities and assess financial risks. Case studies and real-world applications are often integrated into the coursework to enhance practical understanding. Additionally, the course may explore current trends in financial markets, regulatory impacts, and ethical considerations in finance.
By the end of the course, participants should be able to make informed financial decisions, analyze market dynamics, and develop strategic financial plans, preparing them for careers in finance, investment banking, or corporate finance sectors.
Equivalent
1. BS170
2. 2N7000
3. 2N7002
These alternatives may vary in specifications, so always check datasheets for compatibility in your specific application.
Features
1. Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 30V.
2. Current Handling: The maximum continuous drain current (I_D) is typically 3.6A.
3. Low On-Resistance: It offers low on-resistance (R_DS(on)), typically around 0.6 ohms at V_GS = 10V, which enhances efficiency in switching applications.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically between 1-3V, allowing for effective operation at lower gate voltages.
5. Fast Switching Speed: The device supports high-speed switching, making it suitable for applications like power management and signal switching.
6. Package Type: It is available in a convenient Surface Mount Device (SMD) package, facilitating easy integration into modern electronic designs.
These features make the MMBF4393 suitable for a variety of applications, including power amplifiers, battery management systems, and electronic switching circuits.
Pinout
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): The source terminal of the first MOSFET.
3. Drain 1 (D1): The drain terminal of the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): The source terminal of the second MOSFET.
6. Drain 2 (D2): The drain terminal of the second MOSFET.
7. Common Source (CS): Connects the sources of both MOSFETs (in some configurations).
8. Common Drain (CD): Connects the drains of both MOSFETs (in some configurations).
The MMBF4393 is typically used in low-power switching applications and amplifiers, benefiting from its fast switching speeds and low on-resistance.
Manufacturer
Application
1. Switching Power Supplies: Efficiently controlling power in DC-DC converters.
2. Motor Control: Used in driving small motors and actuators.
3. Signal Switching: Ideal for low-frequency signal switching in communication devices.
4. Consumer Electronics: Implemented in audio amplifiers and other electronic devices where low power loss is crucial.
5. LED Drivers: Utilized in LED lighting systems for efficient switching.
The device is favored for its low on-resistance and fast switching capabilities, making it suitable for various electronic applications.